Product Overview
The SIR876ADP-T1-GE3 from Vishay Siliconix is a single N-Channel 100 V TrenchFET power MOSFET in a PowerPAK SO-8 package. It features an RDS(on) of 10.8 mOhm at 10 V gate drive, a continuous drain current of 40 A, and is optimized for primary-side switching in telecom and server 48 V DC-DC converter applications.
Key Specifications
| VDS | 100 V |
| ID (Continuous) | 40 A |
| RDS(on) Max | 10.8 mOhm @ VGS=10V |
| RDS(on) Typ | 14.5 mOhm @ VGS=4.5V |
| VGS(th) Max | 2.8 V |
| Qg Typ | 32.8 nC @ VGS=10V |
| Power Dissipation | 62.5 W (Tc) |
| Package | PowerPAK SO-8 |
| Operating Temperature | -55 to 150 degC |
Features
- TrenchFET power MOSFET technology
- 100% Rg and UIS tested
- Halogen-free per IEC 61249-2-21
- Optimized for 48 V telecom/server DC-DC
- Low RDS(on) of 10.8 mOhm at 10 V
Applications
- Telecom 48 V DC-DC primary-side switch
- Server power supply full/half-bridge converters
- Industrial DC-DC converter switching
- Battery management 48 V systems
- Secondary-side synchronous rectification