SSM3J338R,LF

Product Overview The SSM3J338R,LF from Toshiba is a P-channel MOSFET in a SOT-23F package featuring -12 V drain-source voltage, -6 A continuous drain current, and ultra-low 17.6 mOhm on-resistance at VGS=-8 V. Using Toshiba’s U-MOSVII trench process, it provides high-efficiency switching for battery and load management in portable devices. Key Specifications Type P-Channel Enhancement MOSFET […]