si2301ds-t1-ge3

Product Overview The Vishay SI2301DS-T1-GE3 is a -20V P-ch MOSFET, -2.2A, 120mOhm, SOT-23. It uses TrenchFET technology for low on-resistance and efficient power switching in space-constrained applications. Key Specifications VDS -20V ID -2.2A RDS(on) 120mOhm Package SOT-23 Features TrenchFET technology for low RDS(on) SOT-23 compact package Logic-level gate drive 100% avalanche tested Applications Load switches […]