SI2319DS-T1-GE3

Product Overview The Vishay SI2319DS-T1-GE3 is a -20V P-ch MOSFET, -2.5A, 100mOhm, SOT-23. It uses TrenchFET technology for low on-resistance and efficient power switching in space-constrained applications. Key Specifications VDS -20V ID -2.5A RDS(on) 100mOhm Package SOT-23 Features TrenchFET technology for low RDS(on) SOT-23 compact package Logic-level gate drive 100% avalanche tested Applications Load switches […]