Product Overview The TPN7R506NH,L1Q(M from Toshiba is an N-channel power MOSFET built on the U-MOS VIII-H process technology. With a VDSS of 60 V, an RDS(on) of 7.5 mohm (max) at VGS=10V, and a continuous drain current of 26 A, it is designed for DC-DC converter, switching regulator, and motor drive applications in a compact […]
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