Product Overview
The Infineon IPD90R1K2P7S is a 900V CoolMOS P7 superjunction N-channel power MOSFET in DPAK (TO-252) package. With 1.2Ohm max RDS(ON) and 3.3A drain current, it is designed for high-voltage PFC stages, telecom rectifiers, and industrial SMPS applications requiring 900V blocking capability.
Key Specifications
| Technology | CoolMOS P7 Superjunction |
| VDS | 900V |
| RDS(ON) | 1.2Ohm @ VGS=10V |
| ID (Max) | 3.3A |
| Qg (Total) | 32nC @ 10V |
| Power Dissipation | 31W (TC=25°C) |
| Package | DPAK (TO-252) |
| Operating Temperature | -55°C to +175°C (TJ) |
Features
- 900V CoolMOS P7 superjunction
- 1.2Ohm on-resistance at 900V
- Low gate charge for efficient switching
- DPAK surface-mount package
- RoHS compliant
Applications
- High-voltage PFC stages
- Telecom rectifier power supplies
- Industrial SMPS
- Two-stage PFC + DC-DC
- Power transmission equipment