IR2110STRPBF

Infineon IR2110STRPBF high/low side gate driver, 500V, 2A/2A, SOIC-16W

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Manufacturer Part：

IR2110STRPBF

Package：

SOIC-16W

Description

Product Overview

The IR2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies with independent high-side and low-side output channels. Rated for 500V operation with 2A peak output current, this popular driver offers excellent performance for a wide range of half-bridge and full-bridge applications.

Key Specifications

Manufacturer	Infineon Technologies
Device Type	High-Side/Low-Side Gate Driver
V_OFFSET (IR2110)	500 V (max)
Output Current (IO+/-)	2 A / 2 A (typ peak)
Supply Voltage Range	10 V to 20 V
UVLO Threshold (VCC)	8.5 V (on) / 8.2 V (off)
Propagation Delay	120 ns (on) / 94 ns (off)
Delay Matching	10 ns (max)
Input Logic	3.3V CMOS compatible
Package	SOIC-16W
Operating Temperature	-40°C to +125°C

Features

Floating channel for bootstrap operation up to 500V
dV/dt immune, negative transient tolerant
2A peak source/sink output current
Gate drive supply: 10V to 20V
Undervoltage lockout for both channels
3.3V logic compatible inputs
Separate logic supply (3.3V to 20V)
CMOS Schmitt-triggered inputs
Matched propagation delay (10ns max)
Cycle-by-cycle edge-triggered shutdown

Applications

AC motor drives
Switch-mode power supplies
UPS systems
Welding equipment
Solar inverters
Class D audio amplifiers
Industrial power supplies
DC-DC converters

Product Introduction:IR2110STRPBF Product Introduction

The IR2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Manufactured by Infineon Technologies, this popular driver uses proprietary HVIC and latch-immune CMOS technologies to deliver rugged monolithic construction with excellent performance. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are tightly matched to simplify use in high-frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration operating up to 500 volts.

Working Principle:IR2110STRPBF Working Principle

The IR2110STRPBF operates using high-voltage level-shifting technology to transfer control signals from the low-voltage logic side to the high-voltage floating high-side channel. HIN and LIN inputs independently control the high-side (HO) and low-side (LO) outputs respectively. The SD (shutdown) pin provides an additional control that can force both outputs low when activated, with cycle-by-cycle edge-triggered operation. The high-side driver is powered via a bootstrap capacitor connected between VB and VS pins. Separate logic supply (VDD/VSS) allows the logic interface to operate at different voltage levels from the power stage, with up to ±5V offset between logic ground and power ground. UVLO circuitry ensures both channels remain off if supply voltage is insufficient.

Pin Description:IR2110STRPBF Pin Definition and Functions

Pin Number	Pin Name	Function
1	LO	Low-Side Gate Drive Output
2	VCC	Low-Side Power Supply (10-20V)
3	VB	High-Side Floating Supply (Bootstrap)
4	HO	High-Side Gate Drive Output
5	VS	High-Side Floating Return
6-8	NC	No Connection
9	VDD	Logic Supply Voltage
10	HIN	High-Side Input (Logic)
11	LIN	Low-Side Input (Logic)
12	SD	Shutdown Input (Active High)
13-14	NC	No Connection
15	VSS	Logic Ground
16	COM	Power Ground