SCT2H12NYTB

Product Overview The Rohm SCT2H12NYTB is a 1700V, 4A N-channel Silicon Carbide (SiC) MOSFET in a TO-268-2L surface mount package. Based on 2nd generation planar SiC technology, it features low on-resistance of 1150mΩ, fast switching speed, and high junction temperature capability up to 175°C. The device is designed for high-voltage power switching applications. Key Specifications […]