Product Overview
The Rohm SCT2H12NYTB is a 1700V, 4A N-channel Silicon Carbide (SiC) MOSFET in a TO-268-2L surface mount package. Based on 2nd generation planar SiC technology, it features low on-resistance of 1150mΩ, fast switching speed, and high junction temperature capability up to 175°C. The device is designed for high-voltage power switching applications.
Key Specifications
| Drain-Source Voltage (VDSS) | 1700 V |
| Continuous Drain Current (ID) | 4 A (at TC=25°C) |
| On-Resistance (RDS(on)) | 1150 mΩ (typ), 1500 mΩ (max) |
| Gate Threshold Voltage | 1.6V to 4V |
| Gate Charge (Qg) | 14 nC (at VGS=18V) |
| Input Capacitance (Ciss) | 184 pF (at VDS=800V) |
| Total Power Dissipation | 44 W (at TC=25°C) |
| Junction Temperature | -55°C to +175°C |
| Gate-Source Voltage | -6V to +22V |
| Drive Voltage | 18V |
| Package | TO-268-2L (SMD) |
| Forward Transconductance | 400 mS (min) |
| Turn-On Delay Time | 16 ns (typ) |
| Turn-Off Delay Time | 35 ns (typ) |
Features
- 2nd generation planar SiC MOSFET technology
- 1700V high breakdown voltage for demanding applications
- Low on-resistance with fast switching speed
- Long creepage distance design with no center lead
- Simple gate drive with 18V drive voltage
- High junction temperature capability up to 175°C
- Pb-free lead plating, RoHS compliant
Applications
- Industrial power supplies
- Solar inverters
- EV charging stations
- Motor drives
- High-voltage DC-DC converters
- UPS systems