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TLE2082AIDR

Dual JFET-input op-amp, 10MHz GBW, 40V/us SR, 3mV Vos, SOIC-8, -40 to 85C

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Manufacturer Part：

TLE2082AIDR

Package：

SOIC-8 (4.9x6.0mm)

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Description

Product Overview

The Texas Instruments TLE2082AIDR is a dual JFET-input high-speed operational amplifier from the Excalibur family. With 10MHz GBW, 40V/µs slew rate, and 3mV max offset voltage, it provides direct upgrade to TL07x/TL08x BiFET op-amps in an SOIC-8 package.

Key Specifications

Channels 2 (Dual)
Architecture JFET-Input (BiFET)
GBW Product 10 MHz (typ)
Slew Rate 40 V/µs (typ)
Input Offset Voltage 3 mV max (A grade)
Offset Drift 2.4 µV/°C (typ)
Input Bias Current 175 pA max
Input Noise 12 nV/√Hz @ 1kHz
Supply Voltage Range ±2.25V to ±19V (4.5V to 38V)
Iq per Channel 1.45 mA (typ)
CMRR 98 dB (typ)
Output Current 30 mA (typ)
Operating Temperature -40°C to +85°C
Package SOIC-8 (4.9×6.0mm)

Features

  • Direct upgrade to TL05x, TL07x, TL08x
  • 2× bandwidth and 3× slew rate vs TL08x
  • Wider supply rails (±19V) for larger signal range
  • On-chip zener offset voltage trimming
  • Ultra-low input bias current (JFET input)
  • Pin-compatible with legacy BiFET op-amps

Applications

  • High-impedance sensor signal conditioning
  • Audio preamplifier and active filter
  • Medical instrumentation amplifier
  • Industrial process control

The TLE2082AIDR from Texas Instruments is a dual JFET-input high-speed operational amplifier from the Excalibur BiFET family. With 10MHz gain-bandwidth product and 40V/µs slew rate, it more than doubles the bandwidth and triples the slew rate of legacy TL07x/TL08x op-amps while maintaining pin compatibility. The A-grade offers 3mV max offset voltage through on-chip zener trimming. JFET input provides 175pA max bias current for high-impedance sensor interfacing. Supply range of ±2.25V to ±19V supports wide dynamic signal range.

The TLE2082A uses TI’s Excalibur BiFET process combining JFET input transistors with bipolar output stage. The JFET input pair provides extremely low input bias current (pA range) for high-impedance sensor interfacing without loading the source. The bipolar output stage delivers higher output drive current than pure CMOS alternatives. On-chip zener zapping trims the input offset voltage to 3mV max (A grade) for improved DC precision in direct-coupled applications. The wider supply rails (±19V) increase the dynamic signal range compared to standard TL08x (±15V).

Pin Name Type Description
1 1OUT Output Channel 1 output
2 1IN- Input Channel 1 inverting input
3 1IN+ Input Channel 1 non-inverting input
4 V- Power Negative supply
5 2IN+ Input Channel 2 non-inverting input
6 2IN- Input Channel 2 inverting input
7 2OUT Output Channel 2 output
8 V+ Power Positive supply
  • High-impedance pH and photodiode sensor amplifier
  • Audio preamplifier and equalization filter
  • Medical ECG/EEG instrumentation front-end
  • Industrial 4-20mA receiver circuit
Model Manufacturer Key Difference
TLV9362IDR TI 40V RRIO replacement, -40 to 125°C
TLE2072AIDR TI Lower noise version (7nV/√Hz)
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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