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NTJD4001NT1G


双 N 沟道 MOSFET,30V,250mA,1.0Ω Rds@4V,共源,SC-88/SOT-363,ESD 保护,-55~150°C

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制造商零件:

NTJD4001NT1G

包装:

SC-88 / SC-70-6 / SOT-363(2.0 x 1.25 x 0.9 毫米,0.65 毫米间距)

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说明

onsemi 的 NTJD4001NT1G 是一款双 N 沟道增强型小信号 MOSFET,采用 6 引脚 SC-88 (SOT-363/SC-70-6) 封装(2.0 x 1.25 x 0.9 mm)。两个通道共享一个共源(引脚 3)。每个通道的主要规格30 V VDSS、250 mA 连续漏极电流、VGS=4V 时 1.0 Ω 典型 RDS(on)、VGS=4V 时 1.5 Ω 最大 RDS(on)、1.2 V 典型 VGS(th)、0.9 nC 总栅极电荷、20 pF 输入电容、17-ns 接通延迟、82-ns 下降时间和 272 mW 功率耗散。栅极具有 ESD 保护。工作温度范围为 -55°C 至 +150°C (TJ)。.

Onsemi 的 NTJD4001NT1G 是一款双 N 沟道小信号 MOSFET,专为锂离子电池供电的便携式设备(如手机、PDA 和数码相机)而设计。两个 MOSFET 共用一个源引脚,因此该器件非常适合半桥、负载开关和电平转换应用,在这些应用中,两个晶体管都连接到相同的接地基准。.

30 V 的漏源电压额定值为锂离子电池应用(2.7-4.2 V)提供了充足的余量,同时还支持 5 V 和 12 V 逻辑电平开关。在 VGS = 4 V 时,1.0Ω 的典型 RDS(on) 使 250 mA 时的传导损耗仅为 62.5 mW,完全符合 272 mW 的封装额定值。.

0.9 nC 的栅极电荷(VGS = 5 V 时的典型值)极低,能够以最小的栅极驱动功率实现快速开关。因此,NTJD4001N 适用于栅极驱动损耗必须降至最低的高频 DC-DC 转换器应用(高达数 MHz)。.

ESD 保护栅极可承受处理和装配过程中的静电放电事件,这在大批量消费电子产品制造中是一个实际优势。1.2 V 的典型阈值电压允许 MOSFET 从 1.8 V 逻辑电压直接驱动(在 VGS = 2.5 V 时,RDS(on)增至 2.5 Ω)。.

SC-88 (SOT-363) 封装仅占电路板面积 2.5 mm²,是目前最小的双 MOSFET 封装之一。MSL-1 等级确保了焊接前的无限底板寿命。.

符合 AEC-Q101 标准的汽车合格版本(NVTJD4001NT1G)可用于汽车应用。.

共源配置意味着在需要不同源电压时,两个 MOSFET 不能独立使用。若要使用具有隔离源的独立双 N 沟道 MOSFET,可考虑使用 NTJD4002NT1G 或 2N7002KVT1G。.

** N 沟道增强型 MOSFET:** 每个沟道都是 N 沟道增强型 MOSFET。当 VGS 低于阈值(VGS(th) = 1.2 V 典型值)时,不会形成沟道,漏极-源极路径为高阻抗(关断状态)。当 VGS 超过 VGS(th) 时,栅极氧化物下面会形成反相层,从而在漏极和源极之间形成导电沟道。随着反转层的增强,沟道电阻(RDS(on))会随着 VGS 的增大而减小。.

**共源配置:** 两个 MOSFET 共享引脚 3(源 1 = 源 2)。这种配置适用于低端开关都连接到地的半桥电路,以及负载都返回到同一地的负载开关对。共享源极将引脚数从 8 个减少到 6 个,从而实现了微型 SC-88 封装。.

** ESD 保护栅极:** 栅极端子包括内部 ESD 保护结构(通常是齐纳钳位或背靠背二极管),可将 ESD 能量从薄栅极氧化物分流出去。这种保护允许在不采取特殊预防措施的情况下进行处理和组装,同时栅极氧化物仍受到静电事件的保护,达到指定的 ESD 额定值。.

**体二极管:** 每个 MOSFET 从源极到漏极都有一个固有的体(寄生)二极管(当 VSD > 0.65 V 时为正向偏压)。该二极管在半桥开关的死区时间内导通,在电路设计中必须加以考虑。12.4 ns 的反向恢复时间足以满足大多数低功耗开关应用的要求。.

针脚 名称 类型 说明
1 排水 1 O 通道 1 漏极;最大 30V;持续 250mA;连接至负载或半桥节点
2 1 号门 I 通道 1 栅极;ESD 保护;开关用 1.8-5V 逻辑驱动;VGS 最大 ±20V;0.9nC 栅极电荷
3 资料来源 1/2 P/G 两个通道的共用源;通常与地相连,用于低端开关;每个通道最大 250mA
4 2 号门 I 通道 2 闸门;独立闸门控制;特性与闸门 1 相同
5 排水 2 O 通道 2 漏极;独立漏极连接;额定电压/电流与漏极 1 相同
6 排水 2 O 通道 2 漏极(与引脚 5 并联);引脚 5 和引脚 6 均为内部连接;在 PCB 上连接在一起
应用 说明
锂离子电池负载开关 共源双 MOSFET 作为低端负载开关,用于两个独立的电池供电子系统;MCU GPIO 以 1.8-3.3V 电压驱动栅极;4V 时 1Ω RDS(on),100mA 时 <100mV 压降;ESD 保护栅极可经受操作
半桥 DC-DC 转换器 两个 N 沟道 MOSFET 组成同步降压转换器半桥;共源 = 接地;栅极 1 = 高压侧,栅极 2 = 低压侧(反之亦然);0.9nC 栅极电荷可实现 MHz 开关;5V/12V 输入降压转换器的额定电压为 30V
逻辑级电压转换器 从 1.8V 逻辑电压到 3.3V/5V 总线的开漏电平转换;每个 MOSFET 通过 RDS(on) 拉低一条总线线路;栅极由低压逻辑驱动;漏极上拉电阻器设置高电平;与总线协议双向
模型 制造商 兼容性 主要区别
NVTJD4001NT1G onsemi 汽车版本 相同芯片;通过 AEC-Q101 认证;SOT-363;用于需要认证的汽车应用
NTJD4002NT1G onsemi 系列变体(隔离源) 具有独立源引脚的双 N 沟道 MOSFET;8 引脚封装;在两个 MOSFET 需要不同源电压时使用
2N7002KVT1G onsemi 功能性替代方案 双 N 沟道 MOSFET;60V;300mA;SC-88;独立源;额定电压更高;用于更高电压开关
BSS138DW-7-F 二极管公司 竞争性替代方案 双 N 沟道 MOSFET;50V;220mA;SC-88;共源;规格相似;用作 SC-88 中双 N 沟道的备用源
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