产品概览
The PMV20XNER from Nexperia (formerly NXP) is a 30V N-channel Trench MOSFET in a SOT23 (TO-236AB) package, optimized for low-voltage power switching. It features an exceptionally low 19mΩ typical on-resistance at Vgs=4.5V, supports up to 5.7A continuous drain current, and offers a low threshold voltage of 0.65V (typical). The device provides enhanced power dissipation of 1200mW and includes 2kV HBM ESD protection.
主要规格
| Drain-Source Voltage (Vds) | 30V |
| Gate-Source Voltage (Vgs) | ±12V |
| Continuous Drain Current (Id) | 5.7A (Tamb=25°C on PCB) |
| Pulsed Drain Current (Idm) | 24A |
| Rds(on) typ at Vgs=4.5V | 19 mΩ |
| Rds(on) max at Vgs=4.5V | 23 mΩ |
| Gate Threshold Voltage (Vgs(th)) | 0.4V to 0.9V (typ 0.65V) |
| Total Gate Charge (Qg) | 12.4 nC (typ at Vgs=4.5V) |
| 功率耗散 | 1200 mW (on PCB) |
| 包装 | SOT23 (TO-236AB) |
特点
- Ultra-low 19mΩ on-resistance at 4.5V gate drive
- Low threshold voltage (0.65V typ) enables logic-level drive
- Enhanced 1200mW power dissipation capability
- Trench MOSFET technology for superior current density
- 2kV HBM ESD protection
- High pulsed current capability: 24A
应用
- Load switch in battery-powered portable devices
- DC-DC converter synchronous rectification
- Motor driver for small DC motors and fans
- Power management in notebook and tablet computers
- Hot-swap and power sequencing circuits