Productos
The onsemi BC857BLT1G is a PNP general-purpose bipolar junction transistor (BJT) housed in a SOT-23-3 surface-mount package. Designed for amplifier and switching applications, it offers a collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a transition frequency of 100 MHz. The device is AEC-Q101 qualified, making it suitable for automotive applications.
Especificaciones
| Tipo de transistor | PNP |
| VCEO (Collector-Emitter Voltage) | -45 V |
| VCBO (Collector-Base Voltage) | -50 V |
| VEBO (Emitter-Base Voltage) | -5.0 V |
| IC (Collector Current) | -100 mA |
| VCE(sat) (Max) | -650 mV @ 5 mA, 100 mA |
| hFE (Min) | 220 @ 2 mA, 5 V |
| Power Dissipation | 300 mW |
| Frecuencia de transición (fT) | 100 MHz |
| Temperatura de funcionamiento | -55°C to +150°C (TJ) |
| Paquete | SOT-23-3 (TO-236) |
Características
- AEC-Q101 qualified and PPAP capable for automotive applications
- Low collector-emitter saturation voltage of 650 mV max
- High DC current gain (hFE min 220) for reliable amplification
- Wide operating temperature range from -55°C to +150°C
- Pb-Free, Halogen Free/BFR Free, RoHS compliant
- Compact SOT-23-3 package for high-density PCB designs
Aplicaciones
- General-purpose amplifier circuits
- Switching circuits in automotive electronics
- Signal processing and conditioning
- Current mirror and current source configurations
- Portable and battery-powered devices