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BSS138

N-channel logic-level MOSFET, 50V 220mA, 3.5Ω RDS(on), SOT-23-3, onsemi

500000

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Pieza del fabricante：

BSS138

Paquete：

SOT-23-3 (TO-236AB) 2.9×2.8×1.1mm

Descripción

Productos

The onsemi BSS138 is an N-channel logic-level enhancement mode MOSFET in a SOT-23-3 package. With 50V drain-source voltage, 220mA continuous drain current, and low on-resistance of 3.5Ω (max at VGS=10V), it is designed for low-voltage, low-current switching applications such as small servo motor control, power MOSFET gate drivers, and level shifting.

Especificaciones

Channel Type	N-Channel (Enhancement Mode)
Drain-Source Voltage (VDSS)	50 V
Continuous Drain Current (ID)	220 mA (at TA=25°C)
Pulsed Drain Current	880 mA
RDS(on) at VGS=10V	3.5 Ω (max), 0.7 Ω (typ)
RDS(on) at VGS=4.5V	6.0 Ω (max), 1.0 Ω (typ)
Gate Threshold Voltage	0.8V to 1.5V (at ID=1mA)
Gate-Source Voltage (VGSS)	±20 V
Total Gate Charge (Qg)	1.7 nC (typ at VGS=10V)
Input Capacitance (Ciss)	27 pF (typ at VDS=25V)
Power Dissipation	360 mW (at TA=25°C)
Temperatura de funcionamiento	-55°C to +150°C
Paquete	SOT-23-3 (TO-236AB)

Características

Logic-level gate drive: fully enhanced at VGS=4.5V
Low threshold voltage (0.8V min) for direct MCU interfacing
High density cell design for low RDS(on)
Compact industry-standard SOT-23 surface mount package
Fast switching: turn-on delay 2.5ns, turn-off delay 20ns
Pb-free and halogen free
ESD protection on gate (internal)

Aplicaciones

Logic-level translation and level shifting (I2C, SPI)
Small servo motor control
Power MOSFET gate drivers
Low-side load switches
Relay and solenoid drivers
General-purpose switching circuits

Introducción del producto:BSS138 Presentación del producto

The onsemi BSS138 is an N-channel enhancement mode logic-level MOSFET in the industry-standard SOT-23-3 package. It features a 50V drain-source voltage rating, 220mA continuous drain current, and low on-resistance of 3.5Ω (max at VGS=10V). The logic-level gate drive capability (fully enhanced at 4.5V) and low gate threshold (0.8V-1.5V) make it ideal for direct microcontroller interfacing in level shifting, small load switching, and gate driver applications. The high-density cell design minimizes RDS(on) while the compact SOT-23 package enables high-density PCB layouts.

Principio de funcionamiento:BSS138 Principio de funcionamiento

The BSS138 is an enhancement-mode N-channel MOSFET. The device consists of a P-type silicon substrate with N+ source and drain regions. When a positive voltage is applied to the gate (above threshold VGS(th) of 0.8-1.5V), the electric field through the thin gate oxide inverts the P-type channel region to N-type, creating a conductive path between drain and source. The on-resistance (RDS(on)) depends on VGS: at 10V, RDS(on) is typically 0.7Ω; at 4.5V, it increases to 1.0Ω typ (6.0Ω max). The MOSFET is voltage-controlled — negligible DC gate current flows after the gate capacitance (Ciss=27pF) is charged. Total gate charge is only 1.7nC, enabling fast switching. The body diode (drain-source diode) can conduct reverse current with a forward voltage of 0.8V (typ), useful in flyback/catch diode applications.

Descripción de la clavija:BSS138 Definición y funciones de las clavijas

Descripción de la clavija (las definiciones de las clavijas de salida sólo tienen formato de tabla; devuelven el contenido puro sin derivación ni elaboración adicional)

Application Scenarios:In which products and applications isBSS138 usado

Escenarios de aplicación (las definiciones de las clavijas de salida sólo tienen formato de tabla; devuelven el contenido puro sin derivación ni elaboración adicional)

Alternative Models:What chips are recommended as replacements for BSS138

2N7002 (onsemi/Fairchild, 60V 300mA, similar); BSS138W (onsemi, SOT-323/SC-70, smaller); DMN3133L (Diodes Inc, 30V, lower RDS(on)); SI2302 (Vishay, 20V 2.2A, much higher current); AO3400 (Alpha & Omega, 30V 5A, much higher current)