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IRFL4310TRPBF

-30V P-ch MOSFET, 35mR RDS(on), -6A, SOT-223, high-side switch

9850

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Pieza del fabricante：

IRFL4310TRPBF

Paquete：

D-Pak / SOT-223-3 (6.50 x 3.50 x 1.60 mm)

Marca：
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Descripción

Productos

The IRFL4310TRPBF from Infineon (International Rectifier) is a -30V P-channel power MOSFET with 35mOhm RDS(on) at -10V VGS, 6A continuous drain current, and 30W power dissipation in a D-Pak (SOT-223) surface-mount package.

Especificaciones

Tipo P-Channel MOSFET
VDS -30 V
VGS +/-20 V
ID (continuo) -6 A @ TC=25°C
RDS(on) max 35 mOhm @ VGS=-10V
RDS(on) max 55 mOhm @ VGS=-4.5V
Power Dissipation 30 W @ TC=25°C
Threshold Voltage -1.0 to -2.0 V
Input Capacitance 1400 pF typical
Gate Charge 24 nC typical
Temperatura de funcionamiento -55°C to +175°C
Paquete D-Pak / SOT-223

Características

  • -30V P-channel MOSFET with 35mOhm RDS(on) for high-side switching
  • 6A continuous current in compact D-Pak (SOT-223) surface-mount package

Aplicaciones

  • High-side load switching and battery disconnect circuits

The IRFL4310TRPBF from Infineon (International Rectifier) is a P-channel power MOSFET rated at -30V VDS with 35mOhm maximum on-resistance at VGS=-10V. The device handles -6A continuous drain current and 30W power dissipation in the compact D-Pak (SOT-223) surface-mount package. The low 35mOhm RDS(on) minimizes conduction losses in high-side load switching applications. At VGS=-4.5V, the on-resistance increases to only 55mOhm, making it suitable for logic-level gate drive from 5V microcontrollers. The device is commonly used for high-side power switching, battery disconnect circuits, and power management where a P-channel MOSFET simplifies the gate drive circuit compared to N-channel solutions requiring bootstrapped gate drivers.

The IRFL4310TRPBF is a P-channel enhancement-mode vertical power MOSFET. (1) P-Channel Operation: The MOSFET conducts when the gate voltage is pulled below the source voltage (negative VGS). The body diode is oriented with the anode at the drain and cathode at the source, allowing current flow from drain to source when VGS is insufficient to turn on the channel. (2) High-Side Switching: P-channel MOSFETs are preferred for high-side switching because the gate can be driven relative to the source (connected to the supply rail), requiring only a logic-level voltage swing to ground to turn the device on. This eliminates the need for the bootstrap gate driver required by N-channel high-side switches. (3) Low RDS(on): The 35mOhm on-resistance at -10V VGS minimizes conduction losses (I2R) when the MOSFET is fully enhanced. At 6A load, the conduction loss is only 1.26W. (4) D-Pak Package: The SOT-223 package provides a good balance of power dissipation (30W at TC=25C) and board space, with the large tab serving as both the drain terminal and the primary heat path to the PCB copper.

Pin Nombre Función
1 G Puerta
2 D Drain (also tab)
3 S Fuente
4 D Drain (tab, heat sink)
  • High-side load switching and battery disconnect with simple gate drive
Fabricante Número de pieza Paquete Notas
Infineon IRFR4310TRPBF D-Pak Same die, -30V P-ch
Vishay Si4463DY-T1-E3 SO-8 -30V, 16mOhm, lower Ron
onsemi FDC6310P SOT-223 -20V, 50mOhm, smaller
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