Productos
The TPN7R506NH,L1Q(M from Toshiba is an N-channel power MOSFET built on the U-MOS VIII-H process technology. With a VDSS of 60 V, an RDS(on) of 7.5 mohm (max) at VGS=10V, and a continuous drain current of 26 A, it is designed for DC-DC converter, switching regulator, and motor drive applications in a compact TSON Advance (3.3 x 3.3 mm) package.
Especificaciones
| Voltage (VDSS) | 60 V |
| Drain Current (ID) | 26 A (Tc=25 degC) |
| RDS(on) Max | 7.5 mohm at VGS=10V |
| RDS(on) Max | 16 mohm at VGS=6.5V |
| Gate Threshold (Vth) | 2.0-4.0 V |
| Gate Charge (Qg) | 22 nC (typ) at VGS=10V |
| Input Capacitance (Ciss) | 1410 pF (typ) |
| Power Dissipation | 42 W (Tc=25 degC) |
| Temperatura de funcionamiento | -55 to 150 degC (Tj) |
| Paquete | TSON Advance-8 (3.3 x 3.3 mm) |
Características
- U-MOS VIII-H trench MOSFET technology
- Ultra-low RDS(on): 6.0 mohm typical at VGS=10V
- Low gate charge: 22 nC for efficient switching
- High avalanche energy: 105 mJ
- Enhancement-mode N-channel
- Compact TSON Advance package with exposed drain pad
Aplicaciones
- DC-DC converters and switching regulators
- Motor drivers and motor control
- Power management in computing systems
- Battery-powered portable devices
- Load switching and power routing