产品概览
The UCC21710DWR from TI is a reinforced isolated single IGBT/SiC MOSFET gate driver providing 3 kV RMS isolation, ±10 A peak drive, integrated DESAT fault detection, and active Miller clamp. It targets high-power inverters in EV, solar, and motor drive applications.
主要规格
| 功能 | Isolated single IGBT/SiC gate driver |
| Isolation | 3 kV RMS reinforced |
| 输出电流 | ±10 A peak |
| 传播延迟 | 150 ns |
| Miller Clamp | Active (1.5V clamp) |
| DESAT | Integrated desaturation detect |
| 包装 | SOIC-16W (10.3×7.5mm) |
工作原理
On-chip capacitive isolation barrier transfers control and fault signals across 3 kV RMS isolation. ±10 A totem-pole output drives IGBT/SiC gates with fast rise/fall. DESAT detection monitors collector-emitter voltage and triggers fault shutdown within 3 µs. Active Miller clamp sinks gate current through a dedicated clamp pin to prevent parasitic turn-on during high dv/dt transitions.
应用
- EV powertrain inverter
- Solar inverter (string/central)
- Motor drive (SiC/IGBT)
- UPS / welder