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BAT54J115

30V 200mA Schottky Diode, SOD-323F, Low VF

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Manufacturer Part：

BAT54J115

Package：

SOD-323F / SC-90 (1.7 x 1.25 x 0.85 mm)

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Description

Product Overview

The BAT54J115 from Nexperia is a 30V, 200mA Schottky diode in a SOD-323F (SC-90) surface mount package.

Key Specifications

Type Small Signal Schottky Diode
Peak Reverse Voltage 30 V
Average Rectified Current 200 mA
Forward Voltage 0.24 V (typical) @ IF=1mA
Reverse Leakage 2 uA (max) @ VR=25V
Reverse Recovery Time 5 ns (typical)
Capacitance 4 pF (typical) @ VR=1V, f=1MHz
Package SOD-323F (SC-90)
Operating Temperature -55C to +125C

Features

  • Single Schottky diode in SOD-323F
  • Low 0.24V forward voltage
  • 5ns fast reverse recovery
  • 30V reverse voltage
  • Compact SOD-323F package

Applications

  • Low-voltage rectification
  • Signal gating and mixing
  • Reverse polarity protection
  • Power supply ORing

The BAT54J115 from Nexperia is a single Schottky barrier diode in an ultra-compact SOD-323F (SC-90) surface mount package. The device offers the same electrical characteristics as the BAT54 series (30V, 200mA, 0.24V VF) in a single-diode configuration, providing the smallest possible footprint for applications requiring only one Schottky diode. The 5ns reverse recovery time and 4pF junction capacitance make it suitable for high-frequency switching and RF applications. The low 0.24V forward voltage at 1mA minimizes voltage drop in battery-powered and low-voltage circuits. The 115 suffix indicates tape and reel packaging.

The BAT54J115 uses a metal-silicon Schottky junction where a barrier metal (typically platinum silicide) forms a rectifying contact with N-type silicon. Unlike a P-N junction diode, the Schottky junction operates as a majority-carrier device: electrons cross from the semiconductor to the metal under forward bias without minority carrier injection and storage. This results in the fast 5ns reverse recovery time (no stored charge to remove) and the low 0.24V forward voltage (lower barrier height than silicon P-N junction). The trade-off is higher reverse leakage current (2uA vs nanoamps for P-N diodes) due to thermionic emission over the lower barrier. The SOD-323F package provides a junction-to-ambient thermal resistance of approximately 350 K/W, suitable for the 200mA current rating with proper PCB layout.

Pin Name Type Function
1 Anode Terminal Anode
2 Cathode Terminal Cathode (marked with band)
  • Single-cell Li-ion reverse polarity protection with 0.24V forward drop
  • RF detector circuit with 5ns recovery and 4pF capacitance
  • 3.3V logic level shift clamp diode in compact SOD-323F
  • Solar cell reverse blocking diode with minimal voltage loss
Manufacturer Part Number Package Notes
Nexperia BAT54S,215 SOT-23 Series pair, larger package
Diodes Inc BAT54-7-F SOT-23 Single Schottky, SOT-23
Nexperia BAT54AW,115 SOD-323 Common anode pair, SOD-323
onsemi NSR0530HT1G SOD-323 30V Schottky, SOD-323, alternative
Nexperia PMEG3010EH,115 SOD-323 30V 1A Schottky, higher current
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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