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BSS138P

60V 360mA N-channel Trench MOSFET, logic-level, RDSon 1.6Ω, SOT23, AEC-Q101 qualified

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Manufacturer Part：

BSS138P

Package：

SOT23 (TO-236AB) 2.9 x 1.3 x 1.0 mm

Brand：

Product Categories：

Integrated Circuits ICs, MOSFETs

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Description

Product Overview

The Nexperia BSS138P is a 60V, 360mA N-channel Trench MOSFET in a SOT23 (TO-236AB) package. It features logic-level gate drive, low threshold voltage (1.2V typical), fast switching, and AEC-Q101 qualification for automotive applications.

Key Specifications

Drain-Source Voltage (VDS)	60 V
Continuous Drain Current (ID)	360 mA (at 25°C)
On-Resistance (RDSon)	1.6 Ω max @ VGS=10V
Gate Threshold Voltage (VGSth)	1.2 V (typical)
Total Gate Charge (Qg)	0.72 nC @ VGS=4.5V
Input Capacitance (Ciss)	38 pF @ VDS=10V
Power Dissipation	350 mW (Ta), 1.14W (Tc)
Operating Temperature	-55°C to +150°C
Qualification	AEC-Q101

Features

Logic-level compatible with low threshold voltage
Very fast switching with low gate charge (0.72 nC)
Trench MOSFET technology for low RDSon
AEC-Q101 qualified for automotive applications
Compact SOT23 surface-mount package
Low input capacitance of 38 pF

Applications

Relay driver circuits
High-speed line drivers
Low-side load switches
General-purpose switching circuits

Product Introduction:BSS138P Product Introduction

The Nexperia BSS138P is an N-channel enhancement mode Trench MOSFET housed in a compact SOT23 (TO-236AB) surface-mount plastic package. It features a maximum drain-source voltage of 60V and continuous drain current of 360mA. The device utilizes Trench MOSFET technology to achieve low on-resistance of 1.6 Ω maximum at VGS=10V with logic-level gate compatibility. The low gate threshold voltage of 1.2V (typical) enables direct drive from 3.3V microcontrollers. With a total gate charge of only 0.72 nC, the device offers very fast switching performance. The BSS138P is AEC-Q101 qualified, making it suitable for automotive applications. It operates from -55°C to +150°C with power dissipation up to 350mW at ambient temperature.

Working Principle:BSS138P Working Principle

The BSS138P operates as an N-channel enhancement mode MOSFET. When a positive voltage exceeding the threshold voltage (VGSth ≈ 1.2V) is applied between gate and source, an electric field induces a conductive channel between drain and source, allowing current to flow. The Trench MOSFET architecture uses a vertical trench gate structure that increases channel density and reduces on-resistance compared to planar designs. The low gate charge (0.72 nC) enables rapid charging and discharging of the gate capacitance, resulting in fast turn-on and turn-off times. The device operates in the linear region at low VDS and saturates at higher VDS. The body diode between source and drain provides a path for reverse current during inductive load switching. RDSon varies with VGS — at 5V gate drive, RDSon increases to approximately 2.0 Ω.

Pin Description:BSS138P Pin Definition and Functions

Pin	Name	Type	Function
1	G	Input	Gate — controls channel conductivity
2	S	Power	Source — reference terminal for gate drive
3	D	Power	Drain — current output terminal

Application Scenarios:In which products and applications isBSS138P used

Relay driver circuits in automotive and industrial systems
High-speed line drivers for communication interfaces
Low-side load switches in power management circuits
Level shifting circuits for I2C/SPI interfaces
General-purpose switching in consumer electronics

Alternative Models:What chips are recommended as replacements for BSS138P

Manufacturer	Part Number	Package	Notes
onsemi	BSS138	SOT-23	50V variant, widely compatible
Diodes Inc	BSS138-7-F	SOT-23	Equivalent function
Infineon	BSS138	SOT-23	Equivalent N-channel MOSFET
Nexperia	BSS138BK	SOT-23	Higher voltage variant (60V)
Nexperia	BSS138PS	SOT363	Dual N-channel variant