Product Overview
The IR2101STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver from Infineon Technologies. This half-bridge driver features independent high-side and low-side referenced output channels with 600V floating capability, making it ideal for driving N-channel power devices in half-bridge and full-bridge topologies.
Key Specifications
| Manufacturer | Infineon Technologies |
| Device Type | High-Side/Low-Side Gate Driver |
| V_OFFSET | 600 V (max) |
| Output Current (Source/Sink) | 130 mA / 270 mA (typ) |
| Supply Voltage Range | 10 V to 20 V |
| UVLO Threshold (VCC) | 8.6 V (on) / 8.2 V (off) |
| Propagation Delay (ton/toff) | 620 ns / 220 ns (typ) |
| Dead Time | Internal |
| Input Logic Compatibility | CMOS / LSTTL |
| Package | SOIC-8 |
| Operating Temperature | -40°C to +125°C |
Features
- Floating channel designed for bootstrap operation
- Fully operational up to +600V
- dV/dt immune, negative transient tolerant
- Gate drive supply range: 10V to 20V
- Undervoltage lockout
- CMOS Schmitt-triggered inputs
- Outputs in phase with inputs
- Internal dead time for shoot-through protection
- RoHS compliant, SOIC-8 package
Applications
- AC motor drives
- Switch-mode power supplies
- Half-bridge and full-bridge converters
- UPS systems
- Welding equipment
- LED drivers
- Class D audio amplifiers
- Industrial power supplies