K4A4G165WG-BCWE

4Gb DDR4-3200 SDRAM, 256Mx16, 1.2V, CL22, 4-bank-group, FBGA

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Manufacturer Part：

K4A4G165WG-BCWE

Package：

FBGA

Description

Product Overview

The K4A4G165WG-BCWE is a 4Gbit (256M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 3200 MT/s data rate. It features 4 bank groups (16 total banks), BL8/BC4 on-the-fly, and CL22 timing at 3200 MT/s, providing high bandwidth for embedded computing and networking applications.

Key Specifications

Density	4Gbit (256M x 16)
Standard	DDR4 SDRAM
Data Rate	Up to 3200 MT/s
Supply Voltage	1.2V
CAS Latency	CL22 @ 3200 MT/s
Banks	4 BG x 4 = 16
Package	FBGA
Part Status	Active

Features

4Gbit DDR4 SDRAM with x16 organization
DDR4-3200 data rate (CL22)
1.2V low-power operation
4 bank groups with 16 banks
BL8/BC4 on-the-fly burst length
Write leveling, ODT, and DBI

Applications

Embedded DDR4 memory subsystems
Networking and computing
AI/ML accelerators

Product Introduction:K4A4G165WG-BCWE Product Introduction

The K4A4G165WG-BCWE is a 4Gbit DDR4 SDRAM from Samsung organized as 256M x 16 bits, operating at 1.2V with data rates up to 3200 MT/s (DDR4-3200, CL22). The x16 bus width and 4 bank group architecture provide high bandwidth for embedded computing, networking, and AI/ML applications.

Working Principle:K4A4G165WG-BCWE Working Principle

DDR4 SDRAM per JEDEC JESD79-4. Commands clocked on rising edge of CK/CK#. Data transferred on both edges of DQS (double data rate). Bank group architecture enables pipelined operations for higher effective bandwidth. Write leveling and ODT improve signal integrity at high speeds.

Pin Description:K4A4G165WG-BCWE Pin Definition and Functions

Pin Group	Interface	Function
A0-A17, BA0-BA1, BG0-BG1	Input	Address, bank, bank group
DQ0-DQ15	I/O	16-bit data bus
DQS/DQS#	I/O	Data strobes
CK/CK#, CKE, CS#, RAS#, CAS#, WE#	Input	Clock and command