نظرة عامة على المنتج
The K4A4G165WG-BCWE is a 4Gbit (256M x 16) DDR4 SDRAM from Samsung operating at 1.2V with up to 3200 MT/s data rate. It features 4 bank groups (16 total banks), BL8/BC4 on-the-fly, and CL22 timing at 3200 MT/s, providing high bandwidth for embedded computing and networking applications.
المواصفات الرئيسية
| الكثافة | 4Gbit (256M x 16) |
| Standard | DDR4 SDRAM |
| معدل البيانات | Up to 3200 MT/s |
| جهد الإمداد | 1.2V |
| CAS Latency | CL22 @ 3200 MT/s |
| Banks | 4 BG x 4 = 16 |
| الحزمة | FBGA |
| حالة الجزء | نشط |
الميزات
- 4Gbit DDR4 SDRAM with x16 organization
- DDR4-3200 data rate (CL22)
- 1.2V low-power operation
- 4 bank groups with 16 banks
- BL8/BC4 on-the-fly burst length
- Write leveling, ODT, and DBI
التطبيقات
- Embedded DDR4 memory subsystems
- Networking and computing
- AI/ML accelerators