Product Overview
The K4B4G1646E-BCNB is a 4Gbit (256M x 16) DDR3 SDRAM from Samsung operating at 1.5V with up to 2133 MT/s data rate (CL14). It uses Samsung’s E-die technology with 8 banks, BL8/BC4 on-the-fly burst length, on-die termination, and write leveling. Packaged in a 96-ball FBGA, it provides high-bandwidth memory for computing, networking, and embedded applications.
Key Specifications
| Density | 4Gbit (256M x 16) |
| Standard | DDR3 SDRAM |
| Data Rate | Up to 2133 MT/s |
| Supply Voltage | 1.5V (1.425V to 1.575V) |
| CAS Latency | CL14 @ 2133 MT/s |
| Organization | 32M x 16 x 8 banks |
| Banks | 8 |
| Burst Length | 8 (BL8) / 4 (BC4) on-the-fly |
| Page Size | 2KB |
| Operating Temp | 0°C to +85°C (normal) |
| Package | 96-ball FBGA |
| Part Status | Mass Production |
Features
- 4Gbit DDR3 SDRAM with x16 organization (E-die)
- DDR3-2133 data rate (CL14, tCK = 0.938ns)
- 1.5V VDD/VDDQ operation
- 8 banks with BL8/BC4 on-the-fly burst length
- Posted CAS and programmable additive latency
- On-die termination (ODT) via ODT pin
- Internal self-calibration through ZQ pin
- Asynchronous reset
- Write leveling for multi-rank systems
- Differential data strobe (DQS/DQS#)
- RoHS compliant, lead-free and halogen-free
Applications
- DDR3 memory modules (RDIMM, SO-DIMM, UDIMM)
- Embedded computing and networking
- Consumer electronics main memory
- Graphics and video processing systems
- Industrial control systems