Product Overview
The K6R1008V1D-UC10 is a 1Mbit high-speed CMOS static RAM from Samsung, organized as 128K x 8 bits. UC10 speed grade provides 10ns access time. 3.3V operation, no refresh required. 32-pin TSOP II package.
Key Specifications
| Type | Async SRAM |
| Capacity | 1Mbit (128K x 8) |
| Access Time | 10ns (-UC10) |
| Voltage | 3.3V |
| No Refresh | Static operation |
| Package | 32-pin TSOP II |
Features
- 1Mbit high-speed SRAM: 128K x 8
- 10ns fast access time
- 3.3V single supply
- No refresh needed
- LVTTL compatible
- Three-state outputs
- 32-pin TSOP II
Applications
- High-speed cache memory
- Network packet buffers
- High-speed data acquisition
- DSP systems
- Industrial control