Product Overview
The LT4W256K16-35 is a 4Mbit asynchronous CMOS SRAM (Static Random Access Memory) organized as 256K x 16 bits. It features 35ns access time and operates from a 3.3V supply voltage. The device offers high-speed asynchronous operation with separate byte control (UB/LB) for upper and lower byte access. Available in standard packages such as TSOP-II, it is suitable for a wide range of embedded applications requiring fast volatile memory with low power consumption.
Key Specifications
| Memory Type | SRAM – Asynchronous (Volatile) |
| Memory Size | 4Mbit (256K x 16) |
| Interface | Parallel |
| Access Time | 35 ns |
| Voltage Supply | 3.3V (typ) |
| Organization | 262,144 words x 16 bits |
| Byte Control | UB# and LB# (upper/lower byte select) |
| Operating Temperature | -40°C ~ 85°C (industrial) | Package | TSOP-II (44-pin) |
| Chip Enable | Single CE# control |
Features
- 4Mbit density: 256K x 16 bit organization
- Fast access time: 35ns
- Single 3.3V power supply
- Low power CMOS technology
- Full static operation – no clock or refresh
- Three-state outputs
- Separate byte control: UB# and LB#
- Single chip enable (CE#)
- Output enable (OE#) for memory expansion
- TTL compatible inputs and outputs
- Data retention at low voltage
- Industrial temperature range
- JEDEC standard pinout
- RoHS compliant
Applications
- Cache memory systems
- Industrial control and automation
- Telecommunications equipment
- Embedded systems data buffering
- Networking and data communication
- High-speed data acquisition
- Medical equipment
- Test and measurement instruments