Product Overview
SI4539ADY-T1-E3 is a dual N/P-channel enhancement mode MOSFET with 30V/−30V VDS, 3.9A/−3.2A ID, SOIC-8 package.
Key Specifications
| Type | Dual N/P-channel MOSFET |
| VDS(N) | 30 V |
| VDS(P) | −30 V |
| ID(N) | 3.9 A |
| ID(P) | −3.2 A |
| RDS(on)(N) | 35 mΩ |
| RDS(on)(P) | 65 mΩ |
| Package | SOIC-8 |
Features
- Dual complementary N/P-channel in one package
- Low RDS(on) 35mΩ/65mΩ
- 30V drain-source voltage rating
- SOIC-8 compact surface-mount
- TrenchFET technology for low losses
Applications
Refer to manufacturer datasheet for detailed application information and design guidelines.