2N7002BKS,115

The 2N7002BKS,115 from Nexperia is a small-signal N-channel enhancement-mode MOSFET that leverages advanced Trench MOSFET technology to deliver excellent performance in a compact SOT23 package. Fully qualified to AEC-Q101 automotive standards, this device is designed for use in the most demanding environments with operating junction temperatures up to 150°C. With a drain-source voltage rating of 60V and continuous drain current of 350mA, it provides ample margin for typical low-side switching and signal-level power control applications. The 1.6Ω maximum on-resistance at 10V VGS ensures low conduction losses, while the ultra-low gate charge of just 0.5nC enables high-speed switching with minimal drive requirements. A key feature of the 2N7002BK series is its integrated 2kV ESD protection on the gate-source path, providing robust handling during assembly and in-field operation. The device is logic-level compatible, allowing direct drive from 3.3V and 5V microcontroller outputs without additional level shifting circuitry. Supplied in 7″ tape-and-reel packaging with 3,000 pieces per reel, the 2N7002BKS is ideal for automotive relay drivers, high-speed line drivers, low-side load switches, and general-purpose switching circuits in automotive, industrial, and consumer applications.

The 2N7002BKS operates as an N-channel enhancement-mode MOSFET, functioning as a voltage-controlled switch. When a positive voltage greater than the threshold voltage (VGS(th) = 1.1–2.5V) is applied between the gate and source, an n-type inversion layer (channel) forms in the p-type body region beneath the gate oxide, allowing current to flow between drain and source. The Trench MOSFET technology creates a vertical trench structure that provides a shorter current path and higher cell density compared to planar MOSFETs, resulting in lower on-resistance and smaller chip size for a given current rating. When VGS is below the threshold voltage, the channel is not formed and the device is in the off-state, with only a tiny leakage current flowing. The gate is electrically isolated from the channel by a thin silicon dioxide layer, giving the MOSFET its very high input impedance and near-zero DC gate current. The 2kV ESD protection is provided by integrated diode structures on the gate that clamp ESD voltages to safe levels. The body diode (inherent to all MOSFETs) allows current flow from source to drain when forward biased, which is useful for freewheeling in inductive load applications. The extremely low gate charge (0.5nC) means the device can switch very quickly with minimal drive current, making it suitable for high-frequency switching applications.

Marking: The device is marked with “LN%” (where % indicates the lot/batch code) on the SOT23 package top surface. Pin 1 (Gate) is indicated by a bevel or notch on the corresponding corner. Always verify pin orientation from the official datasheet before assembly.

• Automotive Relay Drivers: Used to drive automotive relays, solenoids, and small motors in body electronics, door modules, and lighting control units
• High-Speed Line Drivers: Serves as a high-speed switch for signal lines, bus switching, and digital signal routing in communication systems
• Low-Side Load Switching: Provides simple low-side switching for LED indicators, small motors, sensors, and other low-current loads
• Level Shifting: Used to translate logic levels between different voltage domains, such as 3.3V to 5V or 5V to 12V
• Power Supply Sequencing: Implements power supply turn-on/off sequencing and load switching in multi-rail systems
• LED Backlight Control: Provides PWM dimming control for LED backlights in displays and automotive instrumentation
• Battery Protection: Used in battery management circuits for overvoltage/overcurrent protection and load disconnect
• Motor Control: Serves as the low-side switch in H-bridge motor driver circuits for small DC motors and stepper motors