Product Overview
The TTA1943 is a silicon PNP epitaxial power transistor from Toshiba Electronic Devices & Storage Corporation, specifically designed for high-fidelity audio power amplifier output stages. With a collector-emitter voltage rating of 230 V and a collector current capability of 15 A, this device delivers 150 W of power dissipation and is recommended for use in 100 W class audio frequency amplifier output stages.
Packaged in a TO-3P(L) through-hole package measuring 20.0 mm × 26.0 mm × 5.0 mm, the TTA1943 features a metal collector tab for direct heatsink mounting, providing excellent thermal performance for high-power audio applications. The device has a transition frequency (fT) of 30 MHz and a DC current gain (hFE) ranging from 80 to 160 at IC = 1 A, ensuring stable and linear operation across the audio frequency band.
The TTA1943 is the PNP complementary pair to the TTC5200 (NPN), forming a matched push-pull pair commonly used in high-end audio amplifier designs. The device operates over a junction temperature range of –55°C to +150°C and is fully RoHS compliant. Note that Toshiba has designated this product as “Not Recommended for New Design” (NRND), with the 2SA1943N in a TO-3P(N) package suggested as an alternative for new designs.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor (BJT) |
| Collector-Base Voltage (VCBO) | –230 V |
| Collector-Emitter Voltage (VCEO) | –230 V |
| Emitter-Base Voltage (VEBO) | –5 V |
| Collector Current (IC) | –15 A (continuous) |
| Base Current (IB) | –1.5 A |
| Collector Power Dissipation (PC) | 150 W (Tc = 25°C) |
| DC Current Gain (hFE) | 80 to 160 @ IC = 1A, VCE = –5V |
| Transition Frequency (fT) | 30 MHz typical |
| Saturation Voltage (VCEsat) | –3.0 V max @ IC = –8A, IB = –800mA |
| Junction Temperature (Tj) | –55°C to +150°C |
| Storage Temperature | –55°C to +150°C |
| Package | TO-3P(L), 3 pins, through-hole |
| Complementary Pair | TTC5200 (NPN) |
Features
- High collector voltage: VCEO = –230 V minimum
- High collector current: IC = –15 A continuous
- High power dissipation: 150 W (Tc = 25°C)
- PNP epitaxial planar silicon transistor
- Complementary to TTC5200 (NPN power transistor)
- Transition frequency: fT = 30 MHz typical
- DC current gain: hFE = 80 to 160 (80 min, 160 max)
- Low saturation voltage for efficient operation
- Recommended for 100 W high-fidelity audio amplifier output stage
- TO-3P(L) through-hole package with metal collector tab
- RoHS compliant and lead-free
- Storage temperature: –55°C to +150°C
Applications
- High-fidelity audio power amplifiers (100W class)
- Push-pull output stages in stereo amplifiers
- Professional audio equipment and PA systems
- Guitar and musical instrument amplifiers
- Home theater and AV receivers
- Linear power supplies and series regulators
- Power switching and driver circuits
- Industrial audio and public address systems