TTA1943


PNP power transistor, 230V VCEO, 15A IC, 150W PD, 30MHz fT, TO-3P(L), audio amplifier output stage

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Manufacturer Part:

TTA1943

Package:

TO-3P(L) - 20.0 x 26.0 x 5.0 mm, through-hole, 3 pins

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Description

Product Overview

The TTA1943 is a silicon PNP epitaxial power transistor from Toshiba Electronic Devices & Storage Corporation, specifically designed for high-fidelity audio power amplifier output stages. With a collector-emitter voltage rating of 230 V and a collector current capability of 15 A, this device delivers 150 W of power dissipation and is recommended for use in 100 W class audio frequency amplifier output stages.

Packaged in a TO-3P(L) through-hole package measuring 20.0 mm × 26.0 mm × 5.0 mm, the TTA1943 features a metal collector tab for direct heatsink mounting, providing excellent thermal performance for high-power audio applications. The device has a transition frequency (fT) of 30 MHz and a DC current gain (hFE) ranging from 80 to 160 at IC = 1 A, ensuring stable and linear operation across the audio frequency band.

The TTA1943 is the PNP complementary pair to the TTC5200 (NPN), forming a matched push-pull pair commonly used in high-end audio amplifier designs. The device operates over a junction temperature range of –55°C to +150°C and is fully RoHS compliant. Note that Toshiba has designated this product as “Not Recommended for New Design” (NRND), with the 2SA1943N in a TO-3P(N) package suggested as an alternative for new designs.

Key Specifications

Parameter Value
Transistor Type PNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (VCBO) –230 V
Collector-Emitter Voltage (VCEO) –230 V
Emitter-Base Voltage (VEBO) –5 V
Collector Current (IC) –15 A (continuous)
Base Current (IB) –1.5 A
Collector Power Dissipation (PC) 150 W (Tc = 25°C)
DC Current Gain (hFE) 80 to 160 @ IC = 1A, VCE = –5V
Transition Frequency (fT) 30 MHz typical
Saturation Voltage (VCEsat) –3.0 V max @ IC = –8A, IB = –800mA
Junction Temperature (Tj) –55°C to +150°C
Storage Temperature –55°C to +150°C
Package TO-3P(L), 3 pins, through-hole
Complementary Pair TTC5200 (NPN)

Features

  • High collector voltage: VCEO = –230 V minimum
  • High collector current: IC = –15 A continuous
  • High power dissipation: 150 W (Tc = 25°C)
  • PNP epitaxial planar silicon transistor
  • Complementary to TTC5200 (NPN power transistor)
  • Transition frequency: fT = 30 MHz typical
  • DC current gain: hFE = 80 to 160 (80 min, 160 max)
  • Low saturation voltage for efficient operation
  • Recommended for 100 W high-fidelity audio amplifier output stage
  • TO-3P(L) through-hole package with metal collector tab
  • RoHS compliant and lead-free
  • Storage temperature: –55°C to +150°C

Applications

  • High-fidelity audio power amplifiers (100W class)
  • Push-pull output stages in stereo amplifiers
  • Professional audio equipment and PA systems
  • Guitar and musical instrument amplifiers
  • Home theater and AV receivers
  • Linear power supplies and series regulators
  • Power switching and driver circuits
  • Industrial audio and public address systems

The TTA1943 is a PNP silicon bipolar power transistor from Toshiba Electronic Devices & Storage, designed specifically for high-voltage, high-power audio amplifier applications. Part of Toshiba’s extensive lineup of power transistors for audio amplification, the TTA1943 is the PNP complement to the TTC5200 NPN transistor, forming a matched push-pull pair widely used in high-fidelity audio power amplifier designs.

Operating at up to 230V collector-emitter voltage and 15A collector current, the TTA1943 can handle up to 150W of power dissipation when properly mounted on a heatsink. This makes it suitable for 100W-class audio frequency amplifier output stages, providing the voltage and current headroom needed for clean, undistorted audio reproduction at high power levels.

The device features a transition frequency of 30 MHz, ensuring good high-frequency response and phase linearity throughout the audio band and beyond. The DC current gain ranges from 80 to 160 at 1A collector current, with consistent gain characteristics that are critical for low-distortion push-pull amplifier designs. The saturation voltage of -3.0V maximum at 8A collector current ensures efficient operation at high output currents.

Housed in the industry-standard TO-3P(L) through-hole package with a metal collector tab, the TTA1943 allows direct mounting to a heatsink for optimal thermal management. The device is fully RoHS compliant and operates over the full industrial temperature range of -55°C to +150°C junction temperature.

Note: Toshiba has designated the TTA1943 as Not Recommended for New Design (NRND). The 2SA1943N in a TO-3P(N) package is recommended for new designs, offering similar electrical characteristics with a slightly different package outline.

The TTA1943 is a PNP bipolar junction transistor (BJT) that operates as follows:

1. PNP Structure: The transistor consists of three alternating semiconductor layers: P-type (emitter), N-type (base), and P-type (collector). Unlike NPN transistors, PNP devices conduct when the base voltage is more negative than the emitter, and conventional current flows from emitter to collector.

2. Active Region: In normal amplifier operation, the emitter-base junction is forward-biased (VE > VB by ~0.7V for silicon) and the collector-base junction is reverse-biased (VB > VC). Holes injected from the emitter into the base region are swept across the reverse-biased collector-base junction into the collector, creating collector current proportional to base current by the current gain hFE.

3. Current Gain (hFE): The DC current gain of the TTA1943 ranges from 80 to 160 at IC = 1A. This relatively high gain means less base drive current is required to achieve a given collector current, simplifying driver stage design in power amplifiers.

4. Saturation Region: When the base drive is sufficient that the collector-base junction becomes forward biased, the transistor enters saturation. In this state, the collector-emitter voltage drops to VCE(sat) = -3.0V maximum at 8A, minimizing power dissipation in the on-state.

5. Thermal Considerations: Power dissipation in the transistor raises the junction temperature. The maximum power dissipation of 150W is specified at TC = 25°C and must be derated linearly at higher case temperatures. Proper heatsinking is essential to keep the junction temperature below 150°C.

6. Safe Operating Area (SOA): The TTA1943 has a well-defined SOA that specifies the simultaneous voltage and current conditions under which the transistor can operate without damage. For audio amplifier designs, the SOA is particularly important since music signals can drive the transistor well outside the DC operating point.

Pin No. Pin Name Type Function
1 Base (B) Input Base terminal. Controls the collector current. Positive with respect to emitter in PNP operation.
2 Collector (C) Output Collector terminal. Connected to the metal tab/heatsink. Negative voltage in PNP operation.
3 Emitter (E) Input/Output Emitter terminal. Most positive terminal in PNP operation. Majority carrier source.
Tab Collector Tab Output Collector tab is internally connected to pin 2 (Collector). Used for heatsink mounting.

Package: TO-3P(L) – 3-lead through-hole plastic package with metal collector tab. Pin configuration (front view, flat side up): Pin 1 = Base, Pin 2 = Collector (center tab), Pin 3 = Emitter. The mounting hole on the tab is at collector potential.

  • High-Fidelity Audio Amplifiers: Push-pull output stages in 100W-class stereo amplifiers, paired with TTC5200 (NPN) for complementary symmetry. The 230V rating and 15A current capability provide ample headroom for dynamic music signals.
  • Professional Audio Equipment: Power amplifiers for live sound, PA systems, and studio monitors where reliable high-power operation and low distortion are essential.
  • Musical Instrument Amplifiers: Guitar and bass amplifiers, including tube amplifier output stage replacements and solid-state designs requiring robust power transistors with good linearity.
  • Home Theater and AV Receivers: Multi-channel audio power amplifiers in home theater systems and AV receivers, where the TTA1943/TTC5200 pair delivers clean power across all channels.
  • Linear Power Supplies: Series-pass regulation in high-voltage linear power supplies for lab equipment and audio components, where the transistor operates in its linear region to provide low-noise output.
  • Industrial Audio Systems: Public address systems, emergency broadcast systems, and industrial audio equipment requiring reliable high-power amplification over extended temperature ranges.
Manufacturer Part Number VCEO IC Notes
Toshiba 2SA1943N 230V 15A NRND replacement, TO-3P(N) package
Toshiba TTC5200 230V 15A NPN complementary pair
ON Semiconductor MJL4302A 260V 15A PNP audio power transistor, TO-264
Sanken 2SA1494 200V 17A Popular audio PNP, complementary to 2SC3858
Fairchild/ON MJ2955 60V 15A Classic PNP power transistor, lower voltage
STMicroelectronics 2SA1943 230V 15A Equivalent PNP audio transistor
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