Product Overview
The OSG95R350HF is a high-voltage silicon carbide (SiC) power MOSFET designed for high-efficiency power conversion applications. Featuring a 950V drain-source voltage rating and ultra-low on-resistance of 350 mΩ, this SiC MOSFET delivers significantly reduced switching losses compared to conventional silicon MOSFETs, enabling higher operating frequencies and improved power density. The TO-247-3 package provides excellent thermal performance and high-voltage isolation, making it suitable for industrial power supplies, renewable energy inverters, and electric vehicle charging systems.
Key Specifications
| Drain-Source Voltage (VDSS) | 950 V |
| Continuous Drain Current (ID) | 40 A |
| On-Resistance (RDS(on)) | 350 mΩ @ VGS=10V |
| Gate-Source Voltage (VGSS) | -10V to +20V |
| Total Gate Charge (Qg) | 120 nC |
| Input Capacitance (Ciss) | 2200 pF |
| Reverse Recovery Charge (Qrr) | 200 nC |
| Thermal Resistance (RthJC) | 0.35 °C/W |
| Operating Temperature | -55°C to +175°C |
| Package Type | TO-247-3 (HF) |
Features
- 950V SiC power MOSFET with ultra-low RDS(on)
- Fast switching speed with low switching losses
- Low gate charge for efficient driving
Applications
- Solar inverters and renewable energy systems
- Electric vehicle battery chargers
- Industrial power supplies
- Uninterruptible power supplies (UPS)
- High-frequency DC-DC converters
- Motor drives and servo systems