Product Overview
The TIP35C is a high-performance NPN silicon power transistor from STMicroelectronics, designed for general-purpose power amplifier and high-current switching applications. Rated at 100 V collector-emitter voltage and 25 A continuous collector current, it delivers 125 W of total power dissipation in a TO-247 package when properly heat-sinked. Manufactured using planar technology with ST’s proprietary ‘base island’ layout, the TIP35C achieves exceptional DC current gain (25-75 hFE range, 40 typical at 15 A) coupled with very low collector-emitter saturation voltage (1.8 V typical at 15 A). The device features 3 MHz minimum transition frequency and a robust safe operating area, making it suitable for both linear and switching modes. The complementary PNP counterpart TIP36C enables push-pull and bridge circuit designs. Widely used in audio power amplifiers, switching regulators, motor drives, and industrial power systems, the TIP35C remains a popular choice for applications requiring reliable high-current amplification and switching performance.
Key Specifications
| Type | NPN Bipolar Power Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 25 A (continuous) |
| Collector Peak Current (ICM) | 50 A (tP < 5 ms) |
| Base Current (IB) | 5 A |
| Total Power Dissipation (PTOT) | 125 W @ TC = 25°C |
| DC Current Gain (hFE) | 25 to 75 (typ. 40 @ IC=15A, VCE=4V) |
| Saturation Voltage VCE(sat) | 1.8 V typ. @ IC=15A, IB=1.5A |
| Saturation Voltage VCE(sat) | 4 V max @ IC=25A, IB=5A |
| Base-Emitter On Voltage VBE(on) | 2 V typ. @ IC=15A, VCE=4V |
| Transition Frequency (fT) | 3 MHz min. |
| Collector Cut-Off Current ICEO | 1 mA max @ VCE=60V |
| Thermal Resistance Rth(j-c) | 1.0 °C/W max. |
| Operating Junction Temperature | -65°C to +150°C |
| Technology | Planar epitaxial, base island layout |
| Package | TO-247 (through-hole) |
Features
- NPN silicon power transistor, 100 V / 25 A rating
- 125 W total power dissipation
- Low collector-emitter saturation voltage
- Excellent DC current gain: hFE = 40 typical @ 15 A
- Complementary PNP available (TIP36C)
- Low leakage current: ICEO = 1.0 mA max
- High current gain bandwidth product: fT ≥ 3 MHz
- Planar technology with ‘base island’ layout
- TO-247 through-hole package with metal tab
Junction-to-case thermal resistance: 1.0 °C/W - Wide safe operating area (SOA)
- RoHS compliant, lead-free package available (TIP35CG)
- Suitable for linear and switching applications
- General-purpose versatility in power circuits
Applications
- Audio power amplifiers (linear output stages)
- Switching regulators and DC-DC converters
- Motor drive and control circuits
- General-purpose high-current switching
- Solenoid and relay drivers
- Power supply output stages
- Inverters and UPS systems
- Welding equipment and power tools
- Automotive power modules
- Push-pull amplifiers (with TIP36C)
- Linear regulators and pass transistors
The TIP35C is a high-voltage, high-current NPN silicon power transistor from STMicroelectronics, designed for general-purpose power amplifier and switching applications. Rated at 100 V collector-emitter voltage and 25 A continuous collector current, it features low collector-emitter saturation voltage and excellent DC current gain (hFE = 40 typical at 15 A). Manufactured using planar technology with a ‘base island’ layout, it achieves exceptional gain performance combined with very low saturation voltage. The device is packaged in a TO-247 through-hole package with a total power dissipation of 125 W at 25°C case temperature. Complementary PNP type TIP36C is available for push-pull amplifier and bridge configurations. With a transition frequency (fT) of 3 MHz minimum and wide safe operating area, the TIP35C is suitable for audio power amplifiers, switching regulators, motor drives, and other medium-to-high power applications.
The TIP35C is a bipolar junction transistor (BJT) of NPN type, where current flowing from base to emitter controls the much larger current flowing from collector to emitter. When the base-emitter junction is forward biased (VBE ~ 1.5 V to 4 V at high currents), majority carriers (electrons) are injected from the emitter into the base region, cross the base, and are collected by the reverse-biased collector-base junction, resulting in collector current that is hFE times the base current. ST’s planar technology with ‘base island’ layout provides optimized doping profiles for both high current gain and low saturation voltage. In switching applications, the transistor operates between cutoff (base current = 0, no collector current) and saturation (base current is high enough that collector current is limited by the external circuit, VCE drops to ~1.8 V). In linear amplifier applications, it operates in the active region where collector current is proportional to base current. The TO-247 package provides excellent thermal transfer to a heat sink via the metal tab, with a junction-to-case thermal resistance of just 1 °C/W, enabling the full 125 W power dissipation rating when properly mounted.
Pin / Terminal Name Description 1 (left) Base (B) Base terminal – control input 2 (middle) Collector (C) Collector terminal – also connected to metal tab (case) 3 (right) Emitter (E) Emitter terminal Metal Tab Collector (C) Exposed metal tab, internally connected to collector. Mount to heat sink with insulator if isolation needed. Complementary Pair: TIP35C (NPN) + TIP36C (PNP) form a complementary pair for push-pull circuits.
Package: TO-247 (TO-218 compatible), three leads, through-hole mounting, body size ~16 x 20.7 mm.
- Audio power amplifiers (linear mode)
- Switching regulators and DC-DC converters
- Motor drive and control circuits
- General-purpose high-current switching
- Solenoid and relay drivers
- Power supply output stages
- Inverter and UPS circuits
- Welding equipment
Model VCEO IC Type Description TIP36C 100V 25A PNP Complementary PNP version TIP35B 80V 25A NPN Lower voltage variant TIP35A 60V 25A NPN Even lower voltage MJ15024 250V 16A NPN Higher voltage audio transistor 2SC5200 230V 17A NPN Toshiba audio transistor FQA55N15 150V 55A N-MOSFET MOSFET alternative Recommend Parts
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