2SA4382


PNP silicon epitaxial power transistor, 230V VCEO, 15A IC, 160W, TO-3P package, complementary to 2SC6011A for audio amplifier output stages.

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Description

Product Overview

The 2SA4382 is a PNP silicon epitaxial planar power transistor designed for high-fidelity audio amplifier output stages. Manufactured by Sanken Electric, it features a 230V collector-emitter voltage rating and 15A collector current capacity, packaged in a TO-3P housing for efficient thermal dissipation. This device is complementary to the 2SC6011A NPN transistor, forming a matched pair for push-pull audio amplifier configurations. With its low saturation voltage and high current gain linearity, the 2SA4382 delivers excellent sound quality in professional audio and high-end consumer amplifier applications.

Key Specifications

Parameter Value
Transistor Type PNP Silicon Epitaxial Planar
Collector-Emitter Voltage (VCEO) 230 V
Collector-Base Voltage (VCBO) 230 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 15 A
Base Current (IB) 4 A
Collector Power Dissipation (PC) 160 W
DC Current Gain (hFE) 50 to 180 (rated O/P/Y)
Collector-Emitter Saturation Voltage 2.5 V (max) @ IC=5A, IB=0.5A
Transition Frequency (fT) 20 MHz (typ)
Output Capacitance (Cob) 270 pF (typ)
Junction Temperature -55 to +150°C
Package TO-3P (3-Lead Through Hole)

Features

  • High voltage and current handling: 230V VCEO, 15A IC, 160W power dissipation
  • Complementary pair with 2SC6011A (NPN) for push-pull audio designs
  • Low on-chip impedance for improved sound output quality
  • Sanken unique wafer-thinner technology for reduced thermal resistance
  • High avalanche breakdown voltage rating for reliability
  • TO-3P package enables compact PCB layout with high power handling
  • Available in three hFE grades: O (50-100), P (70-140), Y (90-180)
  • Suitable for parallel connection in professional audio (PA) amplifiers

Applications

  • High-fidelity audio power amplifiers
  • Professional audio (PA) system output stages
  • Home audio amplifiers and AV receivers
  • Automotive audio amplifiers
  • Push-pull amplifier output stages
  • General-purpose power amplification

The 2SA4382 is a high-performance PNP silicon epitaxial planar power transistor from Sanken Electric, specifically designed for high-fidelity audio amplifier output stages. Utilizing Sanken’s proprietary wafer-thinner technology, this device achieves reduced thermal resistance and enhanced power handling in a compact TO-3P package. With a collector-emitter voltage of 230V and a continuous collector current rating of 15A, the 2SA4382 delivers 160W of power dissipation capability, making it well-suited for demanding audio applications. This transistor forms an ideal complementary pair with the 2SC6011A NPN transistor, enabling designers to implement balanced push-pull amplifier configurations with matched electrical characteristics. The device is available in three hFE grades (O, P, Y), allowing for precise gain matching in amplifier circuits. Its low on-chip impedance contributes to improved sound quality, while the high avalanche breakdown rating ensures reliable operation under transient conditions. The 2SA4382 is suitable for both consumer and professional audio equipment, including high-end stereo amplifiers, AV receivers, automotive audio systems, and professional PA amplifiers that may employ parallel-connected output stages for higher power output.

The 2SA4382 is a PNP bipolar junction transistor (BJT) that operates as a current-controlled current amplifier. In a PNP transistor, current flows from the emitter to the collector when the base-emitter junction is forward-biased (with the emitter at a higher potential than the base). The DC current gain (hFE) determines the ratio of collector current to base current, typically ranging from 50 to 180 depending on the hFE grade. In audio amplifier output stages, the 2SA4382 is used in push-pull configurations paired with its NPN complement (2SC6011A), where each transistor conducts during opposite halves of the audio signal cycle. This complementary symmetry arrangement minimizes crossover distortion and enables efficient power delivery to the load. The transistor’s low saturation voltage ensures minimal power loss during conduction, while the high transition frequency (20 MHz typical) provides sufficient bandwidth for full audio frequency reproduction. The epitaxial planar construction supports high voltage breakdown characteristics necessary for high-voltage rail operation in audio amplifiers.

Pin Number Pin Name Description
1 Base (B) Control terminal – forward-biases the base-emitter junction to control collector current flow
2 Collector (C) Collector terminal – connected to the negative supply rail in PNP configurations; also serves as the mounting tab/heatsink connection
3 Emitter (E) Emitter terminal – source of majority carriers (holes) in PNP operation; connects to the output/load side
  • High-fidelity stereo power amplifier output stages
  • Professional audio (PA) system power amplifiers with parallel output stages
  • Home theater AV receivers and multi-channel amplifiers
  • Automotive audio amplifier output stages
  • Push-pull Class AB audio amplifier configurations
  • Instrumentation and industrial power amplification
Model Manufacturer Key Difference
2SA1943 Toshiba Similar rating (230V/15A/150W), TO-3P, widely used audio output transistor
2SA2151A Sanken Direct complement alternative, 230V/15A/160W, same TO-3P package
MJ15024G ON Semiconductor PNP audio power transistor, 250V/16A/250W, TO-3P, higher power rating
2SA1295 Sanken 230V/17A/200W, higher power dissipation audio transistor
MJE15030G ON Semiconductor PNP driver transistor, 150V/8A/50W, suitable for driver stage use
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Quality is the core foundation of our long-term global cooperation. With over 20 years of experience in the electronic component industry, Materialparts has built a strict and standardized quality management system covering component sourcing, incoming inspection, full-batch testing, packaging and delivery. We are committed to delivering 100% genuine, high-reliability electronic components for industrial control, automotive electronics, consumer electronics and medical device industries, and fully safeguarding your production and R&D projects.

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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China

 

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Contact Information

Email: [email protected]

Tel / WhatsApp: +86 13760382860

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Contact Information

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Email: [email protected]
Tel / WhatsApp: +86 13760382860
Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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