2SC6011A


NPN silicon epitaxial power transistor, 230V VCEO, 15A IC, 160W, TO-3P package, Sanken wafer-thinner technology, designed for high-fidelity audio amplifier output stages.

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Manufacturer Part:

2SC6011A

Package:

TO-3P (M100)

Brand:
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Description

Product Overview

The 2SC6011A is an NPN silicon epitaxial planar power transistor designed for high-performance audio amplification applications. Manufactured by Sanken Electric using their proprietary wafer-thinner technology, this device achieves exceptional power-handling capability in a compact TO-3P package. With a 230V collector-emitter voltage rating, 15A collector current capacity, and 160W power dissipation, the 2SC6011A is well-suited for both consumer and professional audio amplifier output stages. It is complementary to the 2SA2151A PNP transistor, forming a matched pair for push-pull amplifier designs. Available in three hFE grades (O, P, Y), this transistor offers designers flexibility for gain matching and thermal compensation in high-fidelity audio circuits.

Key Specifications

Parameter Value
Transistor Type NPN Silicon Epitaxial Planar
Collector-Emitter Voltage (VCEO) 230 V
Collector-Base Voltage (VCBO) 230 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 15 A
Base Current (IB) 4 A
Collector Power Dissipation (PC) 160 W
DC Current Gain (hFE) 50 to 180 (O/P/Y grades)
Collector-Emitter Saturation Voltage 0.5 V (max) @ IC=5A, IB=0.5A
Transition Frequency (fT) 20 MHz (typ)
Output Capacitance (Cob) 270 pF (typ)
Junction Temperature -55 to +150°C
Package TO-3P (M100)

Features

  • High power handling: 160W in compact TO-3P package
  • High voltage rating: 230V VCEO for professional audio applications
  • Low saturation voltage: 0.5V maximum at 5A collector current
  • Reduced on-chip impedance for improved sound quality
  • Sanken wafer-thinner technology for enhanced thermal performance
  • Complementary to 2SA2151A (PNP) for push-pull amplifier designs
  • Three hFE grades available: O (50-100), P (70-140), Y (90-180)
  • Suitable for parallel connection in high-power PA amplifiers
  • Recommended output driver: 2SC4382A
  • Pb-free terminal plating, RoHS compliant

Applications

  • High-fidelity audio power amplifiers
  • Professional audio (PA) system output stages
  • Home audio amplifiers and AV receivers
  • Automotive audio amplifiers
  • Multichannel audio amplifier designs
  • General-purpose power amplification

The 2SC6011A is a high-performance NPN silicon epitaxial planar power transistor from Sanken Electric, engineered specifically for high-fidelity audio amplification applications. Leveraging Sanken’s proprietary wafer-thinner manufacturing technology, this device achieves significantly reduced thermal resistance compared to conventional transistors, enabling 160W of power dissipation in a standard TO-3P package. This innovative approach allows for more compact PCB layouts while maintaining excellent thermal performance. With a collector-emitter voltage rating of 230V and continuous collector current of 15A, the 2SC6011A is well-positioned for both consumer and professional audio amplifier designs. The device features low on-chip impedance, which contributes to improved audio output quality by minimizing signal degradation and distortion. The 2SC6011A forms an ideal complementary pair with the 2SA2151A PNP transistor, providing matched electrical characteristics for balanced push-pull amplifier configurations. It is available in three DC current gain grades: O (50-100), P (70-140), and Y (90-180), enabling designers to select the appropriate gain class for optimal circuit performance and thermal stability. The transistor’s high avalanche breakdown rating ensures robust operation under transient voltage conditions. This device is suitable for a wide range of audio applications including home stereo amplifiers, AV receivers, multi-channel home theater systems, automotive audio systems, and professional PA amplifiers that may utilize parallel-connected output stages to achieve higher power output levels.

The 2SC6011A is an NPN bipolar junction transistor that functions as a current-controlled current amplifier. In NPN operation, forward-biasing the base-emitter junction causes electrons (majority carriers in the N-type emitter) to flow from the emitter through the thin P-type base region into the N-type collector. The ratio of collector current to base current is defined by the DC current gain hFE, which ranges from 50 to 180 depending on the grade. In audio power amplifier output stages, the 2SC6011A is typically used in a push-pull configuration paired with its PNP complement (2SA2151A), where the NPN device conducts during the positive half-cycles of the audio signal and the PNP device conducts during the negative half-cycles. This complementary symmetry arrangement, operating in Class AB, minimizes crossover distortion while maintaining high efficiency. The low collector-emitter saturation voltage (0.5V max at 5A) ensures minimal power dissipation during full conduction, contributing to higher overall amplifier efficiency. The 20MHz transition frequency provides ample bandwidth for full audio frequency range reproduction with good phase linearity. Sanken’s wafer-thinner technology reduces the silicon thickness, lowering thermal resistance and enabling more efficient heat transfer from the junction to the package and heatsink.

Pin Number Pin Name Description
1 Base (B) Control terminal – small base current controls the much larger collector current; connected to the driver stage output
2 Collector (C) Collector terminal – connected to the positive supply rail; also serves as the main heatsink mounting tab (copper flange)
3 Emitter (E) Emitter terminal – connected to the output load (speaker) through emitter resistors for current sharing and thermal stability
  • High-end consumer audio power amplifiers and integrated amplifiers
  • Professional audio (PA) system output stages with parallel transistor configurations
  • Home theater AV receivers and multi-channel amplifier systems
  • Automotive audio amplifier output stages
  • Studio and broadcast audio equipment
  • Musical instrument amplifiers
Model Manufacturer Key Difference
2SC5200 Toshiba Widely used 230V/15A/150W NPN audio transistor, TO-3P, industry standard
MJ15025G ON Semiconductor 250V/16A/250W NPN audio transistor, TO-3P, higher power rating
2SC3858 Sanken 200V/17A/200W, higher current and power audio transistor
2SC2922 Toshiba 180V/17A/150W NPN power transistor, complementary to 2SA1216
MJL3281AG ON Semiconductor 260V/15A/200W NPN audio output transistor, TO-264, improved SOA
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