Product Overview
The IKW50N60T is a high-performance TRENCHSTOP™ IGBT from Infineon Technologies, rated at 600V and 50A collector current. This device features trench gate field-stop technology combined with an integrated fast recovery anti-parallel diode, delivering excellent switching performance and low conduction losses.
Key Specifications
| Manufacturer | Infineon Technologies |
| Device Type | Trench Field-Stop IGBT with Diode |
| VCE(sat) | 1.8 V (typ) |
| IC (Continuous) | 50 A @ Tc=25°C |
| VCES | 600 V |
| Switching Energy Eon/Eoff | Low switching losses |
| Integrated Diode | Fast Recovery Anti-Parallel Diode |
| Package | TO-247-3 |
| Operating Temperature | -40°C to +175°C |
Features
- TRENCHSTOP™ IGBT technology for low VCE(sat)
- 600V blocking voltage
- 50A continuous collector current rating
- Integrated fast recovery freewheeling diode
- Low switching losses for high frequency operation
- Excellent ruggedness and reliability
- Positive temperature coefficient for easy paralleling
- RoHS compliant, lead-free package
Applications
- Motor drives and inverters
- Uninterruptible power supplies (UPS)
- Welding equipment
- Induction heating
- Solar inverters
- Switch-mode power supplies
- Industrial UPS systems