Product Overview
The IPD068N10N3 is a high-performance N-channel power MOSFET from Infineon Technologies’ OptiMOS™ 3 family. Rated at 100V with 6.8mΩ on-resistance, this device delivers excellent conduction and switching performance for high-efficiency power conversion applications.
Key Specifications
| Manufacturer | Infineon Technologies |
| Device Type | N-Channel Power MOSFET |
| VDS | 100 V |
| ID (Continuous) | 90 A @ Tc=25°C |
| RDS(on) | 6.8 mΩ (typ) @ VGS=10V |
| VGS(th) | 2.0 V to 4.0 V |
| Q_g (Total Gate Charge) | 70 nC (typ) |
| Package | TO-252 (DPAK) |
| Operating Temperature | -55°C to +175°C |
Features
- OptiMOS™ 3 technology for superior performance
- Very low RDS(on): 6.8mΩ typical
- High continuous current rating: 90A
- Low gate charge for fast switching
- 175°C operating junction temperature
- Avalanche energy rated
- RoHS compliant, halogen-free
- TO-252 surface mount package
Applications
- DC-DC converters
- Synchronous rectification
- Motor drives
- Power supply modules
- Battery management systems
- Load switching
- Automotive power systems
- Industrial power electronics