Product Overview
The IPD70R360P7S is a high-voltage N-channel CoolMOS™ P7 super-junction MOSFET from Infineon Technologies. Rated at 700V with 360mΩ on-resistance in a compact TO-252 (DPAK) package, this device offers exceptional efficiency for high-voltage switch-mode power supplies and resonant converter applications.
Key Specifications
| Manufacturer | Infineon Technologies |
| Device Type | N-Channel CoolMOS™ P7 MOSFET |
| VDS | 700 V |
| ID (Continuous) | 11 A @ Tc=25°C |
| RDS(on) | 360 mΩ (typ) @ VGS=10V |
| VGS(th) | 3.0 V (typ) |
| Q_g (Total Gate Charge) | 26 nC (typ) |
| Eoss (Output Capacitance Energy) | 6.9 µJ (typ) |
| Package | TO-252 (DPAK) |
| Operating Temperature | -55°C to +150°C |
Features
- CoolMOS™ P7 super-junction technology
- 700V high voltage rating
- Low RDS(on): 360mΩ typical
- Very low gate charge and output capacitance
- Optimized for hard-switching topologies
- Excellent body diode ruggedness
- Fast switching performance
- RoHS compliant, halogen-free
Applications
- AC-DC power supplies (PFC and LLC)
- Server and telecom power systems
- LED lighting drivers
- Solar micro-inverters
- Industrial power supplies
- Resonant converter topologies
- Consumer electronics SMPS