Product Overview
The IPP200N15N3G is a high-current N-channel power MOSFET from Infineon Technologies’ OptiMOS™ 3 family. Rated at 150V with ultra-low 4.8mΩ on-resistance and 200A current capability, this device delivers exceptional performance for high-power synchronous rectification and motor drive applications.
Key Specifications
| Manufacturer | Infineon Technologies |
| Device Type | N-Channel Power MOSFET |
| VDS | 150 V |
| ID (Continuous) | 200 A @ Tc=25°C |
| RDS(on) | 4.8 mΩ (typ) @ VGS=10V |
| VGS(th) | 2.0 V to 4.0 V |
| Q_g (Total Gate Charge) | 175 nC (typ) |
| Package | TO-220-3 |
| Operating Temperature | -55°C to +175°C |
Features
- OptiMOS™ 3 technology for industry-leading performance
- Ultra-low RDS(on): 4.8mΩ at VGS=10V
- Very high continuous current: 200A
- Optimized for synchronous rectification
- 175°C junction temperature rating
- Excellent avalanche ruggedness
- Fast switching performance
- RoHS compliant, lead-free package
Applications
- Synchronous rectifiers in high-power SMPS
- DC-DC converters
- Motor drive inverters
- UPS systems
- Welding equipment
- Battery management systems
- Electric vehicle power systems
- Industrial power electronics