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IS43TR16512AL-125KBLI

8Gb DDR3L SDRAM, 512Mx16, DDR3-1600, 1.35V, 96-BGA

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Manufacturer Part：

IS43TR16512AL-125KBLI

Package：

96-Ball BGA (10 x 14 x 1.0 mm)

Description

Product Overview

The IS43TR16512AL-125KBLI is an ISSI 8Gb (512Mx16) DDR3L SDRAM running at DDR3-1600 (800MHz clock), 1.35V low-voltage operation with 1.5V backward compatibility, 8 internal banks, dual-rank, and 96-ball BGA package. -40C to +95C. (Obsolete)

Key Specifications

Memory Type	DDR3L SDRAM
Density	8 Gbit (512M x 16)
Speed Grade	DDR3-1600 (11-11-11)
Clock Frequency	800 MHz
Supply Voltage	1.35V (DDR3L), 1.5V compatible
Organization	512M x 16, dual rank
Banks	8 internal
Package	96-ball BGA (10 x 14 mm)

Features

DDR3L 1.35V low-voltage operation
Backward compatible with 1.5V DDR3
8n-bit prefetch architecture
8 internal banks for concurrent operation
Dual-rank x16 organization
Programmable CAS latency (CL)
Programmable burst length: 4 and 8
On-die termination (ODT)
Auto self-refresh with thermal sensor

Applications

Telecom and networking equipment
Automotive infotainment systems
Industrial embedded computing
Data communication systems

Product Introduction:IS43TR16512AL-125KBLI Product Introduction

The IS43TR16512AL-125KBLI is an ISSI 8Gb DDR3L SDRAM organized as 512M x 16 in a 96-ball BGA (10x14mm) package. The -125K speed grade supports DDR3-1600 operation with CL=11 at 800MHz clock frequency (1600 MT/s data rate). The DDR3L suffix indicates 1.35V operation with backward compatibility to 1.5V DDR3, reducing power consumption by approximately 15% compared to standard DDR3. The dual-rank x16 organization with 8 internal banks enables high-bandwidth concurrent operation. The 8n-bit prefetch architecture fetches 8 bits of data per clock cycle, supporting the high data transfer rates. The device includes programmable CAS latency, programmable burst length (4 or 8), on-die termination (ODT), off-chip driver (OCD) impedance adjustment, and write leveling for fly-by topology support. The auto self-refresh mode with integrated thermal sensor adjusts the refresh rate based on operating temperature. Note: This product has been obsoleted by ISSI.

Working Principle:IS43TR16512AL-125KBLI Working Principle

The IS43TR16512AL-125KBLI is a double data rate synchronous dynamic random-access memory (DDR3L SDRAM). Data is transferred on both the rising and falling edges of the differential clock (CK/CK#), achieving double the data rate compared to single-data-rate SDRAM. The 8n-bit prefetch architecture reads 8 bits from the memory array per access, which are then serialized to the data bus over 4 clock cycles at the I/O rate. Commands (activate, read, write, precharge, refresh) are registered on the rising edge of CK. The 8 internal banks allow overlapping of row access, column access, and precharge operations across different banks, maximizing data bus utilization. The DDR3L mode register (MR0-MR2) configures CAS latency, burst length, additive latency, write recovery, and other operational parameters. The on-die termination (ODT) feature provides programmable termination resistance on the DQ, DQS, and DM pins, reducing signal reflections.

Pin Description:IS43TR16512AL-125KBLI Pin Definition and Functions

Pin Group	Description
A0-A14, BA0-BA2	Row, column, and bank address inputs
CK, CK#	Differential clock inputs
CKE0, CKE1	Clock enable per rank
CS0#, CS1#	Chip select per rank
RAS#, CAS#, WE#	Command inputs
DQ0-DQ15	Data bus (bidirectional)
DQS0, DQS1	Data strobe (bidirectional, differential)
DM0, DM1	Data mask inputs
ODT0, ODT1	On-die termination control per rank
RESET#	Asynchronous reset

Application Scenarios:In which products and applications isIS43TR16512AL-125KBLI used

Automotive infotainment system main memory at 1.35V DDR3L-1600 with 8Gb density for rich media
Telecom switch control plane memory with dual-rank x16 for high bandwidth data path
Industrial embedded computing with 1.35V DDR3L reducing thermal load in sealed enclosures
Networking equipment buffer memory with ODT for multi-DIMM signal integrity

Alternative Models:What chips are recommended as replacements for IS43TR16512AL-125KBLI

Model	Manufacturer	Key Difference
IS43TR16512S2DL-125KBLI	ISSI	Direct replacement, newer revision
MT41K256M16TW-107	Micron	4Gb x16 DDR3L, smaller density
EM6AB16CWKG-12H	Etron	8Gb DDR3L, x16
H5TQ4G63AFR-PBC	SK Hynix	4Gb x16 DDR3L-1600