Product Overview
The IS61C6416AL-12TLI from ISSI is a 1Mbit (64Kx16) asynchronous SRAM with 12ns access time. 3.3V supply. 16-bit data bus for high-throughput 16-bit systems. Low standby current. TSOP-44 Type II industrial package for cache and buffer memory applications.
Key Specifications
| Type | Asynchronous SRAM |
| Density | 1 Mbit (64K x 16) |
| Organization | 64K x 16 |
| Access Time | 12 ns |
| Supply Voltage | 3.3V |
| Standby Current | 30 mA typ |
| Active Current | 90 mA typ at 12ns |
| Operating Temp | -40 to +85C (Industrial) |
| Package | TSOP-44 (Type II) |
Working Principle
The IS61C6416AL uses a six-transistor (6T) CMOS SRAM cell array. Address inputs are decoded by row and column decoders to select the 16-bit word. The sense amplifiers detect the small signal from the selected cells and drive the output buffers. Chip enable (CE), output enable (OE), and write enable (WE) control the tri-state I/O and read/write operations. Byte write enables (UB, LB) allow individual high-byte and low-byte writes. The 12ns access time supports zero-wait-state operation in 50MHz+ processor systems.
Applications
- Cache memory
- Buffer storage
- DSP scratchpad
- Embedded systems