MMBT3904LT1G

NPN 40V 200mA general-purpose BJT, SOT-23, hFE 100-300, 300 MHz, switching/amplifier

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Manufacturer Part：

MMBT3904LT1G

Package：

SOT-23 (TO-236-3) (2.9 x 1.3 x 1.0 mm)

Brand：

Product Categories：

Insulated Gate Bipolar Transistors (IGBT), Integrated Circuits ICs

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Description

Product Overview

The MMBT3904LT1G from ON Semiconductor is a general-purpose NPN bipolar junction transistor in a SOT-23 (TO-236-3) surface-mount package. Rated at 40 V VCEO and 200 mA IC continuous, it provides a DC current gain (hFE) of 100 to 300 and transition frequency of 300 MHz, making it ideal for switching and amplifier applications.

Key Specifications

Type	NPN General Purpose
VCEO	40 V
VCBO	60 V
IC (Continuous)	200 mA
hFE (DC Current Gain)	100 to 300 @ 10 mA
fT (Transition Frequency)	300 MHz
Power Dissipation	0.225 W
Package	SOT-23 (TO-236-3)
Operating Temperature	-55 to 150 degC

Features

Industry-standard 2N3904 in SMD package
General-purpose NPN switching and amplification
High current gain range of 100-300
300 MHz transition frequency
Pb-free, RoHS compliant

Applications

General-purpose switching circuits
Signal amplification
Digital logic interfacing
LED driver circuits
Sensor signal conditioning

Product Introduction:MMBT3904LT1G Product Introduction

The MMBT3904LT1G from ON Semiconductor is the surface-mount equivalent of the industry-standard 2N3904 NPN general-purpose transistor in a SOT-23 package. With a 40 V VCEO rating, 200 mA continuous collector current, and DC current gain of 100 to 300, it is one of the most widely used small-signal transistors for general switching and amplification. The 300 MHz transition frequency supports moderate-speed switching applications. Pb-free and RoHS compliant, it is suitable for automotive, industrial, and consumer electronics.

Working Principle:MMBT3904LT1G Working Principle

The MMBT3904 operates as a current-controlled device where a small base current controls a larger collector current. In the active region, IC = hFE x IB, where hFE ranges from 100 to 300. For switching applications, the transistor is driven between cutoff (no base drive, IC = 0) and saturation (sufficient base drive to fully turn on, VCE(sat) typically 0.2 V at 50 mA). The 300 MHz transition frequency indicates the frequency at which the common-emitter current gain drops to unity, defining the useful bandwidth for amplifier applications.

Pin Description:MMBT3904LT1G Pin Definition and Functions

Pin	Name	Type	Function
1	B	Base	Base control input
2	E	Emitter	Emitter terminal
3	C	Collector	Collector terminal

Application Scenarios:In which products and applications isMMBT3904LT1G used

General-purpose digital logic level shifting and interfacing
Small-signal audio and sensor amplification
LED and relay driver switching circuits
Power supply enable and disable control
Sensor signal conditioning and buffer circuits

Alternative Models:What chips are recommended as replacements for MMBT3904LT1G

Manufacturer	Part Number	Package	Notes
Diodes Inc	MMBT3904-7-F	SOT-23	Direct equivalent
Nexperia	MMBT3904,215	SOT-23	Direct equivalent
Infineon	MMBT3904H6327	SOT-23	Direct equivalent
ROHM	MMBT3904LT1G	SOT-23	Direct equivalent
ONsemi	MMBT3906LT1G	SOT-23	PNP complement (3906)