NX3008CBKS,115

The NX3008CBKS,115 from Nexperia is a complementary N-channel and P-channel enhancement-mode MOSFET pair in the ultra-compact SOT363 (SC-88) surface-mount package. Built on advanced Trench MOSFET technology, this dual device combines one N-channel and one P-channel MOSFET in a single 6-pin SOT363 package, making it ideal for complementary switching and level shifter applications where both N-channel and P-channel devices are needed. With a 30V drain-source voltage rating and 350mA / 200mA continuous drain current capability (N-channel / P-channel respectively), the NX3008CBK handles a wide range of low to medium power switching tasks. The low 0.9V typical threshold voltage enables direct drive from low-voltage logic circuits (2.5V and above), while the low gate charge (0.52nC N-channel, 0.44nC P-channel) enables high-speed switching with minimal drive requirements. Fully qualified to AEC-Q101 automotive standards with 2kV ESD protection on the gates, this device is suitable for the most demanding automotive and industrial environments. The 150°C maximum junction temperature rating provides ample thermal margin. The complementary N/P configuration in a single package reduces board space and component count compared to using two separate MOSFETs. Supplied in 7″ tape-and-reel packaging with 3,000 pieces per reel, the NX3008CBKS is widely used in logic level shifting, power supply converters, load switching, and general-purpose switching circuits.

The NX3008CBKS contains two independent MOSFETs — one N-channel and one P-channel enhancement-mode Trench MOSFET — fabricated on a single silicon die and housed in a 6-pin SOT363 package. The N-channel MOSFET turns on when a positive voltage greater than the threshold voltage (VGS(th) = 0.9V typ) is applied between the gate and source, creating an n-type inversion layer that allows current to flow from drain to source. The P-channel MOSFET operates similarly but with opposite polarity — it turns on when the gate is driven negative relative to the source (VGS < -0.9V typ), allowing current to flow from source to drain. The Trench MOSFET technology creates vertical trench structures in the silicon, resulting in higher cell density, lower on-resistance, and faster switching compared to planar MOSFETs of equivalent die size. Both devices have the gate electrode electrically isolated from the channel by a thin silicon dioxide layer, giving them very high input impedance and near-zero DC gate current. The integrated 2kV ESD protection diodes on the gate terminals protect against electrostatic discharge during handling and assembly. In complementary pair applications (such as level shifters), the N-channel and P-channel devices work together — when the input is high, the N-channel turns on and the P-channel turns off, pulling the output low; when the input is low, the P-channel turns on and the N-channel turns off, pulling the output high. This push-pull configuration provides fast rise and fall times with low output impedance.

Marking: “LD%” (where % is the lot/batch code) is printed on the top surface of the SOT363 package. Pin 1 is identified by a beveled corner. Note that the N-channel and P-channel MOSFETs are independent devices with separate gate, source, and drain connections — they are not internally connected. The SOT363 package is also known as SC-88 or TSSOP-6, measuring just 2.0mm × 1.25mm × 0.95mm.

• Logic Level Shifting: The complementary N/P configuration is ideal for bidirectional level shifting between different voltage domains (e.g., 3.3V to 5V, 1.8V to 3.3V) in mixed-voltage systems
• Power Supply Converters: Used in low-power DC-DC converters, charge pumps, and inverting converters as the primary switching elements
• Load Switching: Provides both high-side (P-channel) and low-side (N-channel) load switching capability in a single package for power distribution and management
• Automotive Body Electronics: Deployed in BCM modules, door controllers, and lighting control units for signal switching and small load driving requiring AEC-Q101 qualification
• LED Backlight Control: Implements PWM dimming control for LED backlights in displays, automotive instrument clusters, and lighting applications
• Signal Switching: Used for analog and digital signal routing, multiplexing, and bus switching in communication and interface circuits
• Battery-Powered Devices: Suitable for portable and battery-operated devices due to low threshold voltage, low gate charge, and support for low-voltage operation
• Motor Control: Serves as the low-voltage control side of motor driver circuits, providing complementary drive signals for higher-power stages