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PESD5V0U1UT

Ultra-low cap (0.6pF) unidirectional ESD diode, 5V VRWM, 30kV ESD, SOT-23

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Manufacturer Part：

PESD5V0U1UT

Package：

SOT-23 (TO-236AB) - 2.9 x 1.3 x 1.0 mm

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Description

Product Overview

The PESD5V0U1UT is an ultra-low capacitance unidirectional ESD protection diode manufactured by Nexperia in a SOT-23 (TO-236AB) plastic package. Designed to protect one high-speed data line from electrostatic discharge and other transients, the device features a diode capacitance of only 0.6 pF, reverse standoff voltage of 5V, peak pulse power of 80W, and ESD protection up to 30 kV per IEC 61000-4-2.

Key Specifications

Configuration Single Diode, Unidirectional
Reverse Standoff Voltage (VRWM) 5V
Diode Capacitance (Cd) 0.6 pF typical @ f=1MHz, VR=0V
Peak Pulse Power (PPPM) 80W @ 8/20 us
ESD Protection 30 kV (IEC 61000-4-2 contact)
Number of Protected Lines 1
Operating Temperature -65degC to +150degC
Package SOT-23 (2.9 x 1.3 x 1.0 mm)

Features

  • Ultra-low diode capacitance of 0.6 pF preserves signal integrity on high-speed lines
  • ESD protection up to 30 kV per IEC 61000-4-2 Level 4
  • Unidirectional protection for 5V signal lines
  • 80W peak pulse power for surge handling per IEC 61000-4-5
  • Industry-standard SOT-23 package for easy placement

Applications

  • 10/100/1000 Ethernet data line ESD protection
  • FireWire (IEEE 1394) interface protection
  • High-speed USB data line transient suppression
  • LAN equipment and computer peripheral ESD clamping
  • SIM card and smart card reader protection

The PESD5V0U1UT from Nexperia is an ultra-low capacitance unidirectional ESD protection diode in a SOT-23 package, designed to protect a single high-speed data line from electrostatic discharge and transient events. With a diode capacitance of only 0.6 pF, the device preserves signal integrity on high-speed interfaces such as Gigabit Ethernet, USB, and FireWire. The 5V reverse standoff voltage makes it compatible with standard 3.3V and 5V logic levels. The device provides IEC 61000-4-2 Level 4 ESD protection up to 30 kV contact discharge and 80W peak pulse power per IEC 61000-4-5, ensuring robust protection against both ESD and surge events in communication and computing equipment.

The PESD5V0U1UT uses a specialized low-capacitance silicon structure optimized for high-speed signal protection. Under normal operation (voltages below 5V), the diode presents minimal loading to the signal line with only 0.6 pF of capacitance, which is low enough to avoid degrading signal integrity at Gigabit data rates. When an ESD or surge event occurs, the diode rapidly avalanches and conducts the transient current to ground, clamping the voltage at the protected node to a safe level. The unidirectional design means the device clamps positive transients through the forward and avalanche modes, while negative transients are clamped by the forward diode characteristic. The compact SOT-23 package minimizes parasitic inductance in the protection path, ensuring fast clamping response to sub-nanosecond ESD rise times.

Pin Name Type Function
1 I/O I/O Protected line connection (cathode side)
2 N/C – Not connected
3 GND Ground Ground reference (anode)
  • Gigabit Ethernet (1000BASE-T) differential pair ESD protection on MAC/PHY interfaces
  • USB 2.0/3.0 high-speed D+ and D- data line transient suppression
  • FireWire (IEEE 1394) port ESD protection on shielded twisted pair lines
  • SIM card and smart card reader contact ESD clamping in mobile devices
  • HDMI source-side low-capacitance ESD protection on TMDS lines
Manufacturer Part Number Package Notes
Nexperia PESD5V0S1BL DFN1006-2 0.6pF bidirectional, ultra-small
TI TPD4E05U06 USON-10 4-ch, 0.5pF, 5V ESD
onsemi ESD9L5.0ST5G SOD-523 0.8pF, 5V unidirectional
ST ESD5V0U1U DFN1006-2 0.6pF, ultra-small footprint
Diodes Inc PESD5V0U1UL DFN1006-2 2pF, 5V unidirectional
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Address: Room 2919, Guoli Building, Huaqiang North, Futian District, Shenzhen, Guangdong, China
 

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