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QPA2237

0.03-2.5GHz 10W GaN PA, >40dBm PSat, >48% PAE, 4x4mm QFN

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Manufacturer Part：

QPA2237

Package：

OVM QFN-20 (4.00 x 4.00 x 0.85 mm)

Description

Product Overview

The QPA2237 from Qorvo is a wideband 0.03-2.5 GHz, 10 W GaN-on-SiC power amplifier in a 20-lead 4×4 mm OVM QFN package. Providing >40 dBm saturated output power with >13 dB large signal gain and >48% PAE, it targets radar, electronic warfare, and communication system applications.

Key Specifications

Frequency Range	0.03 to 2.5 GHz
PSat	>40 dBm @ Pin=27 dBm
PAE	>48%
Large Signal Gain	>13 dB
Small Signal Gain	>18.5 dB
Input Return Loss	>9 dB
Drain Bias	Vd = 32 V, Idq = 360 mA
Package	OVM QFN 4×4 mm (20-lead)

Features

0.25 µm GaN on SiC process for high power density and reliability
Wideband 0.03-2.5 GHz operation with flat power response
Fully matched to 50 ohm at both RF ports
High PAE >48% reduces system power dissipation
Compact 4×4 mm surface-mount QFN package

Applications

Military and commercial radar
Electronic warfare systems
Communication systems and VSAT
Cellular infrastructure base stations
Point-to-point radio links

Product Introduction:QPA2237 Product Introduction

The QPA2237 from Qorvo is a wideband gallium nitride (GaN) on silicon carbide (SiC) power amplifier covering 0.03 GHz to 2.5 GHz in a compact 4×4 mm OVM QFN surface-mount package. Fabricated on Qorvo’s production 0.25 µm GaN-on-SiC process, the device delivers greater than 10 W (40 dBm) saturated output power with greater than 13 dB large signal gain and greater than 48% power-added efficiency. The small signal gain exceeds 18.5 dB and both RF ports are internally matched to 50 ohms, simplifying system integration. The device operates from a 32 V drain supply with a quiescent current of 360 mA. The wide bandwidth covers L, S, and lower C bands in a single device, making it ideal for multi-band radar, electronic warfare, and communication applications. DC blocks are required on both RF ports and drain voltage is injected through an off-chip bias-tee on the RF output.

Working Principle:QPA2237 Working Principle

The QPA2237 uses a GaN HEMT (high electron mobility transistor) fabricated on a semi-insulating SiC substrate. The GaN/SiC material system provides high breakdown voltage, high electron saturation velocity, and excellent thermal conductivity. The amplifier topology consists of a single-stage GaN HEMT with internal input and output matching networks implemented using planar transmission lines and MIM capacitors on the SiC substrate. The input match transforms the low gate impedance to 50 ohms over the 0.03-2.5 GHz band, while the output match transforms the low drain impedance to 50 ohms. Under large-signal drive, the HEMT operates in class AB bias with the gate biased at approximately -2.1 V for 360 mA quiescent drain current at 32 V. The high electron mobility of the GaN 2DEG channel and the high breakdown field of the GaN material enable the combination of high power density and wide bandwidth in a compact die.

Pin Description:QPA2237 Pin Definition and Functions

Pin Group	Count	Function
RF IN	1	RF input port (50 Ω matched); requires external DC block capacitor
RF OUT / DRAIN	1	RF output port (50 Ω matched); drain bias injected via external bias-tee
GATE	1	Gate bias control pin; typically biased at -2.1 V for class AB operation
GND	16	RF and thermal ground connections (package base and perimeter pads)
NC	1	No connect

Package: 20-lead OVM QFN (4.0 x 4.0 x 0.85 mm). The exposed pad on the package bottom must be soldered to the PCB ground plane for proper RF grounding and thermal management. Both RF ports require external DC blocking capacitors.

Application Scenarios:In which products and applications isQPA2237 used

Military Radar: Transmit power amplifier in S-band surveillance and tracking radar systems
Electronic Warfare: Wideband jamming and spoofing amplifier covering multiple threat bands
VSAT Terminals: L-band and S-band satellite uplink power amplification
Cellular Infrastructure: Base station power amplifier for multi-band macro and small cell systems
Point-to-Point Radio: Transmit chain amplifier in licensed microwave backhaul links

Alternative Models:What chips are recommended as replacements for QPA2237

Model	Manufacturer	Freq Range	PSat	PAE	Package	Notes
QPA2238	Qorvo	0.03-3 GHz	20 W	40%	QFN	Higher power, wider bandwidth
T1G4003532-FL	Qorvo	DC-3.5 GHz	25 W	40%	Flange	Higher power, flange package
CGH40180PP	Wolfspeed	DC-6 GHz	180 W	55%	Flange	Much higher power
HMC414MS8G	Analog Devices	5.5-8 GHz	5 W	32%	MSOP-8	Different band, lower power
MAAL-011129	Macom	2-20 GHz	4 W	25%	DFN	Wider band, lower power