Product Overview
The IRF1010EPBF is an N-channel HEXFET power MOSFET from Infineon Technologies. Featuring low on-resistance and high current handling capability, this device is designed for high-power switching applications in a through-hole TO-220AB package. It is part of the HEXFET series known for its ruggedness and reliability.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 60V |
| Continuous Drain Current (ID) | 84A @ Tc=25°C |
| On-Resistance (RDS(on)) | 3.4mΩ max @ VGS=10V | Gate Threshold Voltage (VGS(th)) | 2V to 4V |
| Total Gate Charge (Qg) | 210nC (typ) |
| Power Dissipation (PD) | 200W @ Tc=25°C |
| Operating Junction Temperature | -55°C to +175°C |
| Package | TO-220AB |
Features
- Ultra-low on-resistance for high efficiency
- High current carrying capability
- Fast switching speed
- Fully characterized avalanche voltage and current
- Dynamic dv/dt rating
- RoHS compliant and lead-free
- Industry standard TO-220AB package
Applications
- DC-DC converters
- Motor control and drives
- Power management systems
- Battery protection circuits
- Load switching
- Industrial power supplies