Product Overview
The IRFS4310ZTRLPBF is a 100V N-Channel HEXFET Power MOSFET from Infineon Technologies (formerly International Rectifier), part of the HEXFET® product family. This device combines optimized silicon processing with industry-standard packaging to deliver reliable performance for demanding power electronics applications. The IRFS4310ZTRLPBF provides a well-balanced combination of voltage rating, current handling, and on-resistance, making it suitable for a wide range of power conversion and switching applications.
Manufactured using advanced power MOSFET technology, the IRFS4310ZTRLPBF features a rugged design with fully characterized avalanche performance and dynamic dv/dt capability. The device is available in a D2PAK (TO-263AB) package, offering proven thermal performance and board-level reliability for volume production environments.
Key Specifications
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID @ 25°C) | 130A |
| Pulsed Drain Current (IDM) | — |
| On-Resistance (RDS(on) max @ VGS=10V) | 7 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 – 4.0 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Total Gate Charge (Qg) | — |
| Power Dissipation (PD) | 300 W |
| Operating Junction Temperature | -55 to +175 °C |
| Package | D2PAK (TO-263AB) |
Features
- 100 V drain-source voltage rating
- Advanced HEXFET®
- Ultra low on-resistance, high current capability
- Dynamic dv/dt ruggedness rating
- 175°C operating junction temperature (where applicable)
- Fast switching speed
- Fully avalanche rated for reliability
- Lead-free and RoHS compliant
- D2PAK (TO-263AB) package
Applications
- High current switching, DC-DC converters, motor control
- Switch Mode Power Supplies (SMPS)
- DC-DC converters
- Motor control and drives
- Power management systems
- Industrial power systems
- Load switching applications