Product Overview
The IRF5210STRLPBF is a P-channel HEXFET power MOSFET from Infineon Technologies. With a 100V voltage rating and high current capability, this D2PAK surface-mount device is designed for high-side switching and various power management applications.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | -100V |
| Continuous Drain Current (ID) | -39A @ Tc=25°C |
| On-Resistance (RDS(on)) | 70mΩ max @ VGS=-10V |
| Gate Threshold Voltage (VGS(th)) | -2V to -4V |
| Total Gate Charge (Qg) | 160nC (typ) |
| Power Dissipation (PD) | 200W @ Tc=25°C |
| Operating Junction Temperature | -55°C to +175°C |
| Package | D2PAK (TO-263) |
Features
- P-channel configuration for high-side switching
- Low on-resistance (70mΩ max)
- High current handling capability
- Fast switching speed
- Fully characterized avalanche energy
- Dynamic dv/dt rating
- D2PAK surface-mount package
- RoHS compliant and lead-free
Applications
- High-side load switching
- Battery management systems
- Motor control (H-bridge)
- DC-DC converters
- Power supply circuits
- Automotive applications