Product Overview
The IRF630NPBF is an N-channel HEXFET power MOSFET from Infineon Technologies with 200V voltage rating and 9.3A continuous drain current. This through-hole TO-220AB device is designed for medium-voltage power switching applications, offering a balance of voltage capability, on-resistance, and switching speed.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 200V |
| Continuous Drain Current (ID) | 9.3A @ Tc=25°C |
| On-Resistance (RDS(on)) | 300mΩ max @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | 2V to 4V |
| Total Gate Charge (Qg) | 35nC (max) |
| Power Dissipation (PD) | 82W @ Tc=25°C |
| Operating Junction Temperature | -55°C to +175°C |
| Package | TO-220AB |
Features
- N-channel enhancement mode MOSFET
- 200V drain-source voltage rating
- Low gate charge for fast switching
- Fully characterized avalanche voltage and current
- Improved dv/dt capability, high ruggedness
- Fast switching speed
- RoHS compliant and lead-free
- Standard TO-220AB through-hole package
Applications
- High efficiency switch mode power supplies
- Power factor correction (PFC)
- Electronic lamp ballast
- DC-DC converters
- Motor control circuits
- Industrial power systems