Product Overview
The IRF7103TRPBF is a dual N-channel MOSFET from Infineon Technologies, housing two independent N-channel MOSFETs in a single SOIC-8 package. With 50V rating and 3A per channel, and featuring logic level gate drive, this device is ideal for compact low-voltage power management applications.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 50V |
| Continuous Drain Current (ID) | 3A @ 25°C (per channel) |
| On-Resistance (RDS(on)) | 130mΩ max @ VGS=10V |
| On-Resistance @ 4.5V | 200mΩ max |
| Gate Threshold Voltage (VGS(th)) | 1V to 3V |
| Total Gate Charge (Qg) | 12nC (typ) @ 4.5V |
| Power Dissipation (PD) | 2W per channel |
| Operating Junction Temperature | -55°C to +150°C |
| Package | SOIC-8 |
Features
- Dual N-channel MOSFET in SOIC-8 package
- Logic level gate drive (VGS(th) = 1-3V)
- Ultra-low gate impedance
- Fully characterized avalanche voltage and current
- Low gate charge for fast switching
- RoHS compliant and lead-free
- Surface mount SOIC-8 package
Applications
- Load switching
- Battery management
- DC-DC converters
- Power management ICs
- Portable electronics
- Low power motor drives