Product Overview
The IRF7317TRPBF is a dual P-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 package. Featuring 20V voltage rating and -3.9A per channel, this dual P-channel device is designed for high-side load switching and other low-voltage power management applications.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | -20V |
| Continuous Drain Current (ID) | -3.9A @ 25°C (per channel) |
| On-Resistance (RDS(on)) | 52mΩ max @ VGS=-10V |
| On-Resistance @ -4.5V | 70mΩ max |
| Gate Threshold Voltage (VGS(th)) | -1V to -2.5V |
| Total Gate Charge (Qg) | 11nC (typ) @ 4.5V |
| Power Dissipation | 2W per channel |
| Operating Junction Temperature | -55°C to +150°C |
| Package | SOIC-8 |
Features
- Dual P-channel MOSFET configuration
- Logic level gate drive (-1 to -2.5V VGS(th))
- Low on-resistance (52mΩ max)
- Fast switching speed
- Fully characterized avalanche energy
- Compact SOIC-8 surface mount package
- RoHS compliant and lead-free
Applications
- High-side load switching
- Battery management systems
- DC-DC converters
- Power management ICs
- Portable electronics
- Notebook power systems