Product Overview
The IRF7342TRPBF is a dual N-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 package. Rated at 30V with 6.7A per channel, this device offers a good balance of current capability and on-resistance for low-voltage power switching applications.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 30V |
| Continuous Drain Current (ID) | 6.7A @ 25°C (per channel) |
| On-Resistance (RDS(on)) | 17mΩ max @ VGS=10V |
| On-Resistance @ 4.5V | 22mΩ max |
| Gate Threshold Voltage (VGS(th)) | 1V to 2.5V |
| Total Gate Charge (Qg) | 18nC (typ) |
| Power Dissipation | 2.5W per channel |
| Operating Junction Temperature | -55°C to +150°C |
| Package | SOIC-8 |
Features
- Dual N-channel MOSFET in SOIC-8
- Low on-resistance (17mΩ max)
- Logic level gate drive compatible
- Fast switching performance
- Fully characterized avalanche energy
- Ultra-low gate impedance
- RoHS compliant and lead-free
- Surface mount SOIC-8 package
Applications
- DC-DC converters
- Synchronous rectification
- Load switching
- Battery protection circuits
- Power management ICs
- Notebook computers