Product Overview
The IRF7351TRPBF is a dual N-channel HEXFET power MOSFET from Infineon Technologies in a SOIC-8 package. With 60V voltage rating and 8A per channel, this device offers excellent on-resistance performance for medium-voltage power switching and synchronous rectification applications.
Key Specifications
| Parameter | Value |
| Drain-Source Voltage (VDSS) | 60V |
| Continuous Drain Current (ID) | 8A @ 25°C (per channel) |
| On-Resistance (RDS(on)) | 17.8mΩ max @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | 2V to 4V |
| Total Gate Charge (Qg) | 24nC (typ) @ 10V |
| Gate-Drain Charge (Qgd) | 7.2nC (typ) |
| Power Dissipation | 2W per channel |
| Operating Junction Temperature | -55°C to +150°C |
| Package | SOIC-8 |
Features
- Ultra-low on-resistance (17.8mΩ max)
- Ultra-low gate impedance
- Fully characterized avalanche voltage and current
- 20V VGS max gate rating
- Fast switching speed
- Dual N-channel configuration
- RoHS compliant and lead-free
- SOIC-8 surface mount package
Applications
- Synchronous rectifier for isolated DC-DC converters
- Low power motor drive systems
- DC-DC converters
- Load switching
- Power management circuits
- Industrial power supplies